Polycrystalline PbSe on a polyimide substrate

Radovsky, Gal; Dashevsky, Z.; Kasiyan, V.; Auslender, Mark; Hava, S.

doi:10.1016/j.jallcom.2010.04.064

Cited by 12 publications

(2 citation statements)

References 16 publications

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“…6 a Typical EDX spectrum of PbSe thin film electrodeposited at bath temperature 75°C. b Variation of Pb and Se content (atomic %) with bath temperature for PbSe thin films obtained at various bath temperatures in the range between 45 and 90°C gap value of the material obtained in the present work is found to be in close agreement with value reported earlier for PbSe [23].…”

Section: Optical Absorption Analysissupporting

confidence: 90%

Growth and characterization of lead selenide thin films

Thanikaikarasan¹,

Mahalingam

Dhanasekaran

et al. 2012

J Mater Sci: Mater Electron

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Growth of lead selenide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath consists of Pb(CH 3 COO) 2 and SeO 2 . X-ray diffraction analysis has been carried out to determine the crystal structure and phases of the deposited films. Microstructural parameters such as crystallite size, strain and dislocation density which have been evaluated from X-ray diffraction data. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. The effect of bath temperature on structural, microstructural, morphological and compositional properties of the films are studied and the results are discussed. Optical absorption measurements shows that the deposited films possess a direct band gap value of 0.38 eV.

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Section: Optical Absorption Analysissupporting

confidence: 90%

Growth and characterization of lead selenide thin films

Thanikaikarasan¹,

Mahalingam

Dhanasekaran

et al. 2012

J Mater Sci: Mater Electron

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“…Various methods including decomposition at solid-state synthesis [6] and preparation of nanopowders [7] are used for the preparation of nanostructured materials. In this work, the flash evaporation technology method, first developed by Prof. Z. Dashevsky for Bi 2 Te 3 based compounds [10,11], was used for the preparation of the lead chalcogenides (PbTe, PbTe, PbS) semiconductor films [12][13][14][15][16][17][18][19][20][21][22][23][24][25]. The setup for the film preparation is presented in Figure 1 [11].…”

Section: Methodsmentioning

confidence: 99%

A Review of Nanocrystalline Film Thermoelectrics on Lead Chalcogenide Semiconductors: Progress and Application

et al. 2023

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Submicron-structured films of thermoelectric materials, exhibiting an improved thermoelectric figure of merit, are reviewed, including methods of fabrication and characterization. The review emphasizes the beneficial role of the grain boundaries in polycrystalline films. The enhanced Seebeck coefficient of lead chalcogenide films is attributed to a potential relief that is built along the grain boundaries. It scatters charge carriers with low energy and does not affect carriers with higher energy. The model that accounts for the thermoelectric properties of the films is described and assessed experimentally. The application of a flexible thermoelectric device (module) based on the nanocrystalline film thermoelectric semiconductors as high sensitivity radiation detectors is suggested.

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Polycrystalline lead selenide prepared by an oxygen ion beam induction

Yang

Wang

et al. 2021

Journal of Alloys and Compounds

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Polycrystalline PbSe on a polyimide substrate

Cited by 12 publications

References 16 publications

Growth and characterization of lead selenide thin films

Growth and characterization of lead selenide thin films

A Review of Nanocrystalline Film Thermoelectrics on Lead Chalcogenide Semiconductors: Progress and Application

Polycrystalline lead selenide prepared by an oxygen ion beam induction

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