2007
DOI: 10.1016/j.matlet.2006.05.010
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Polycrystalline films of tungsten-doped indium oxide prepared by d.c. magnetron sputtering

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Cited by 32 publications
(10 citation statements)
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“…Although there are many studies assisting in optic and electrical effects of W atoms [7][8][9], magnetization was not a known subject for W doped wide band gap oxide semiconductors. On the other hand, the anomalous magnetic properties were known due to strong s-f exchange interaction in Eu-Chalcogenide Alloys [10].…”
Section: Introductionmentioning
confidence: 99%
“…Although there are many studies assisting in optic and electrical effects of W atoms [7][8][9], magnetization was not a known subject for W doped wide band gap oxide semiconductors. On the other hand, the anomalous magnetic properties were known due to strong s-f exchange interaction in Eu-Chalcogenide Alloys [10].…”
Section: Introductionmentioning
confidence: 99%
“…The average transmittance from 400 to 2500 nm is relatively higher than conventionally sputtered polycrystalline ITO [9,10], whose transmittance curve declines evidently at wavelength over 1200 nm. It indicates that amorphous IWO have potential application in solar cells to transmit more long-wavelength radiation, as well as in energy-efficient windows installed in cold regions to transmit more sunlight into the room.…”
Section: Optical Propertiesmentioning
confidence: 75%
“…With the development of transparent electronics, much effort is underway to optimize TCO films. Lately reported polycrystalline molybdenum-doped indium oxide (IMO) [6,7] and tungsten-doped indium oxide (IWO) [8,9] thin films are attractive due to their high carrier mobility producing a low resistivity comparable to that of ITO films. In our previous work [10,11], investigations into carrier concentration, carrier mobility and transparency in the near-infrared region of polycrystalline IWO were carried out.…”
Section: Introductionmentioning
confidence: 99%
“…Tungsten with a lower ionic radius and higher oxidation state compared to In 3+ cation can be a good dopant for In2O3 lattice. It is reported that tungsten doped indium oxide films have high mobility, low electrical resistivity and high transparency in the visible and near infrared region [17][18][19][20][21][22]. Structural properties can affect the quality of thin films thereby modifying their optical, electrical, sensing properties etc.…”
Section: Introductionmentioning
confidence: 99%