Polycrystalline and Mesoporous 3-D Bi₂O₃ Nanostructured Negatrodes for High-Energy and Power-Asymmetric Supercapacitors: Superfast Room-Temperature Direct Wet Chemical Growth

Abstract

Superfast (≤10 min) room-temperature (300 K) chemical synthesis of three-dimensional (3-D) polycrystalline and mesoporous bismuth(III) oxide (BiO) nanostructured negatrode (as an abbreviation of negative electrode) materials, viz., coconut shell, marigold, honey nest cross section and rose with different surface areas, charge transfer resistances, and electrochemical performances essential for energy storage, harvesting, and even catalysis devices, are directly grown onto Ni foam without and with poly(ethylene glycol), ethylene glycol, and ammonium fluoride surfactants, respectively. Smaller diffusion lengths, caused by the involvement of irregular crevices, allow electrolyte ions to infiltrate deeply, increasing the utility of inner active sites for the following electrochemical performance. A marigold 3-D BiO electrode of 58 m·g surface area has demonstrated a specific capacitance of 447 F·g at 2 A·g and chemical stability of 85% even after 5000 redox cycles at 10 A·g in a 6 M KOH electrolyte solution, which were higher than those of other morphology negatrode materials. An asymmetric supercapacitor (AS) device assembled with marigold BiO negatrode and manganese(II) carbonate quantum dots/nickel hydrogen-manganese(II)-carbonate (MnCOQDs/NiH-Mn-CO) positrode corroborates as high as 51 Wh·kg energy at 1500 W·kg power and nearly 81% cycling stability even after 5000 cycles. The obtained results were comparable or superior to the values reported previously for other BiO morphologies. This AS assembly glowed a red-light-emitting diode for 20 min, demonstrating the scientific and industrial credentials of the developed superfast BiO nanostructured negatrodes in assembling various energy storage devices.

Supercapatteries as High-Performance Electrochemical Energy Storage Devices

“…Due to this, symmetrical devices composed of pseudocapacitive materials are not favourable for high energy capacity EES devices and various asymmetrical designs have been proposed to achieve high voltage. Currently, two main designs for asymmetrical devices exist in which one involves asymmetrical supercapacitors with positive and negative electrodes (the positrode: the positive electrode [24,27,[38][39][40][41][42][43]; the negatrode: the negative electrode [24,27,[39][40][41][42][43][44]) capable of capacitive charge storage typically through the permutation and combination of EDL and pseudocapacitive electrodes, whereas the other design involves hybrid configurations that combine supercapacitor electrodes with battery electrodes and have been reported under different names that mainly correspond to the different electrode materials used. Overall, the word 'hybrid' is not a suitable unified expression for the future development of these asymmetrical devices because it is too abstract, whereas the terms 'supercapattery' or 'supercabattery' are general enough to represent Fig.…”

MOF-derived Bi2O3@C microrods as negative electrodes for advanced asymmetric supercapacitors

“…8,9 For instance, Qiu et al 10 synthesized ultrathin Bi 2 O 3 nanowires by oxidative metal vapor transport deposition technique, which exhibited high specic capacity (576 C g À1 at 2 A g À1 ). Shinde et al 11 grew 3D Bi 2 O 3 by fast chemical method at room temperature, which demonstrated a specic capacity of 447 C g À1 at current density of 2 A g À1 . Liu et al 12 designed oxygen-decient r-Bi 2 O 3 /graphene exible electrode with high specic capacity of 1137 C g À1 at 1 mA cm À2 .…”

Fabrication of an Advanced Symmetric Supercapattery Based on Nanostructured Bismuth‐Cobalt‐Zinc Ternary Oxide Anchored on Silicon Carbide Hybrid Composite Electrode

“…The peak at ≈99.6 eV can be attributed to the Si—C bond whereas the other three signals corresponding to the binding energies of ≈101.4, 102.5, and 104.9 eV are assigned to some intermediate oxidation products of SiC existing on the surface as SiOC 3 , SiO 2 C 2 , and SiO 3 C respectively . Also, Bi 4f spectrum exhibited two prominent peaks at ≈161.5 and 166.9 eV indicating the Bi 4f 7/2 and Bi 4f 5/2 states where the peak spacing of ≈5.3 eV is observed which corresponds to the Bi 3+ oxidation state in Bi 2 O 3 (Figure D) . The core‐level Co 2p and Zn 2p spectra are shown in Figure E,F where in Co 2p two sharp peaks are observed at binding energies ≈782.5 and 797.8 eV that are relative to Co 2p 3/2 and Co 2p 1/2 states.…”

“…[30] Also, Bi 4f spectrum exhibited two prominent peaks at %161.5 and 166.9 eV indicating the Bi 4f 7/2 and Bi 4f 5/2 states where the peak spacing of %5.3 eV is observed which corresponds to the Bi 3þ oxidation state in Bi 2 O 3 ( Figure 2D). [31] The core-level Co 2p and Zn 2p spectra are shown in Figure 2E,F where in Co 2p two sharp peaks are observed at binding energies %782.5 and 797.8 eV that are relative to Co 2p 3/2 and Co 2p 1/2 states. This implies that cobalt ions existed in divalent state in its oxide form.…”