Polycarbonate electron beam resist using solvent developer

Abbas, Arwa Saud; Yavuz, Mustafa; Cui, Bo

doi:10.1016/j.mee.2013.08.006

Cited by 8 publications

(8 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has been previously shown that solvents of thermoplastic electron-beam resists (e.g., poly(methyl methacrylate) (PMMA) and polycarbonate (PC)) are often diluted at 1:3 ratio with a nonsolvent (e.g., IPA) in order to form a developer where the solvent is weakened and the dissolution of unexposed regions is prevented. [16,17] Examples of this approach are 1:3 methyl isobutyl ketone-IPA and 1:3 cyclopentanone-IPA solutions used for the development of PMMA and PC, respectively. [16,17] Xylene is a solvent of PS while alcohols are nonsolvents, and thus 1:3 xylene-IPA solution was found to act as a suitable developer.…”

Section: Resultsmentioning

confidence: 99%

Polystyrene Pocket Lithography: Sculpting Plastic with Light

et al. 2022

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Polystyrene Pocket Lithography: Sculpting Plastic with Light

et al. 2022

View full text Add to dashboard Cite

show abstract

“…[47] The data of PMMA, ZEP, and HSQ were measured at the same condition with CO 2 -PC resists as described in Figure S17 (Supporting Information). Inspired by the above results, typical micro-/nanoscale patterns including grating domains, concentric circles, and Siemens star structures were written into PLC 44 and PLDC 47 resists (Figure 1). All the films are around 100 nm thick and exposed under a higher accelerating voltage (100 keV) to promote the patterning quality.…”

Section: The Construction Of Micro-/nanoscale Patterns and The Resolution Of Co 2 -Pc Resistsmentioning

confidence: 96%

“…This abnormal result can be attributed to the high electron tolerance of the aromatic substituents and is consistent with the performance of the bisphenol-A polycarbonate (BPA-PC) resist whose sensitivity is larger than 1000 µC cm −2 . [42][43][44][45] Compared to the mono-substituted PPC and PSC materials, PCHC (T g = 120 °C) bearing rigid cyclohexenyl side group gives a considerably higher sensitivity of 150 µC cm −2 (Table 1, entry 5) since the rigid chain is prone to fracture due to the high chain strain. Given the crowded cyclic carbonate units of the ultrarigid PLDC (T g = 174 °C), the highest sensitivity of 120 µC cm −2 in positive CO 2 -PC resists (Table 1, entry 6) was expected.…”

Section: (3 Of 9)mentioning

confidence: 99%

CO₂‐Based Dual‐Tone Resists for Electron Beam Lithography

Luo

Wang

et al. 2020

Adv Funct Materials

View full text Add to dashboard Cite

The increasing global environmental and energy crisis has urgently motivated the advancement of sustainable materials. Significant effort has been focused on developing new materials to replace the fossil‐based resists in the semiconductor industry based on greener sources such as ice, dry ice, small organic molecules, and proteins. Such resist materials, however, have yet to meet the stringent requirements of high sensitivity, high resolution, reliable repeatability, and good compatibility with the current protocols. To this end, CO2‐based polycarbonates (CO2‐PCs) obtained from the copolymerization of CO2 and epoxides are demonstrated as sustainable dual‐tone (positive & negative tone) resists for electron beam lithography. By adjusting the chemical structure, developing agent, and molecular weight, the CO2‐PCs present high sensitivities to electron beam (1.3/120 µC cm−2), narrow critical dimensions (29/58 nm), and moderate line edge roughness (4.6/26.7 nm) for negative and positive resists, respectively. A deep understanding of the exposure mechanism of CO2‐PC resists is provided on the basis of the Fourier transform infrared, Raman, and electron ionization mass spectroscopy. 2D photonic crystal devices are fabricated using the negative and positive CO2‐PC resists, respectively, and both devices show distinct colors derived from their well‐defined nanostructures, indicating the great practical potential of CO2‐derived electron beam resists.

show abstract

“…Compared to PMMA, it has a much higher mechanical toughness, thermal resistance, chemical stability, and as PMMA, it is widely used in optical applications. A range of publications show that, owing to its radiation susceptibility, PC can be used as a positive or negative resist for electron beam lithography [15,16]. It has also been demonstrated that it acts as a type of ion-beam resist in the fabrication of micro-and nanopore membranes and templates for nanowires by chemical etching of through-holes along ion tracks produced by high-energy ions [17,18].…”

Section: Introductionmentioning

confidence: 99%

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

Chiriaev

Tavares

Adashkevich

et al. 2020

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

This work explores a new technique for the out-of-plane patterning of metal thin films prefabricated on the surface of a polymer substrate. This technique is based on an ion-beam-induced material modification in the bulk of the polymer. Effects of subsurface and surface processes on the surface morphology have been studied for three polymer materials: poly(methyl methacrylate), polycarbonate, and polydimethylsiloxane, by using focused ion beam irradiation with He+, Ne+, and Ga+. Thin films of a Pt60Pd40 alloy and of pristine Au were used to compare the patterning of thin films with different microstructures. We show that the height of Pt60Pd40 thin films deposited onto poly(methyl methacrylate) and polycarbonate substrates can be patterned by He+ ion beams with ultrahigh precision (nanometers) while preserving in-plane features, at the nanoscale, of the pre-deposited films. Ion irradiation of the Au-coated samples results in delamination, bulging, and perforation of the Au film, which is attributed to the accumulation of gases from radiolysis at the film–substrate interface. The irradiation with Ne+ and Ga+ ions destroys the films and roughens the surface due to dominating sputtering processes. A very different behavior, resulting in the formation of complex, multiscale 3D patterns, is observed for polydimethylsiloxane samples. The roles of the metal film structure, elastic properties of the polymer substrate, and irradiation-induced mechanical strain in the patterning process are elaborated and discussed.

show abstract

Polycarbonate electron beam resist using solvent developer

Cited by 8 publications

References 16 publications

Polystyrene Pocket Lithography: Sculpting Plastic with Light

Polystyrene Pocket Lithography: Sculpting Plastic with Light

CO₂‐Based Dual‐Tone Resists for Electron Beam Lithography

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

Contact Info

Product

Resources

About

Polycarbonate electron beam resist using solvent developer

Cited by 8 publications

References 16 publications

Polystyrene Pocket Lithography: Sculpting Plastic with Light

Polystyrene Pocket Lithography: Sculpting Plastic with Light

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

Contact Info

Product

Resources

About

CO₂‐Based Dual‐Tone Resists for Electron Beam Lithography