Polyassociative thermodynamic model of A2B6 semiconductor melt and phase equilibria in Cd-Hg-Te system. p−T−x diagram of Cd-Hg-Te system

Abstract

x T p − − diagram of Cd-Hg-Te system is analyzed in the framework of the polyassociative solution model. The temperature dependence of the dissociation constant for ternary complexes, which describes the mixing effects, was determined using the low temperature data on phase equilibrium in the system. A satisfactory agreement between calculated and experimental data of various works about phase equilibrium was attained.

Isothermal growth kinetics of CdxHg1-xTe LPE layers

“…The most complete kinetic description of the interaction between the liquid and solid phases during the formation of a heterostructure was carried out in work [3] with the use of the assumptions about diffusion mass transfer in the ternary systems of A 3 B 5 semiconductors. The offered software of solving the problem concerning the interaction kinetics of phases at LPE in the Cd-Hg-Te system was used in works [4,5].…”

“…Thus, the thermodynamic equilibrium is supposed to exist on the surface boundary, which corresponds to the high rate of surface reactions. Then the problem of mass transfer to the interface includes the system of diffusion differential equations written down in the coordinate system moving together with the interface and the condition of substance conservation during its transition through the interface [3]: − C C s the ratio of the molar densities of solid and liquid phases; i stands for particular solutes, Cd or Hg, and − z the coordinate axis directed into the melt.…”