Polyaniline Based Field Effect Transistor for Humidity Sensor

Abstract

In this present research work, we presented a new Bottom Gate P-Type Organic Field Effect Transistor (OFET) humidity sensor and its applicability towards humidity has been experimentally demonstrated. Ptype organic semiconductor polyaniline (PANI) has been used in a variety of applications, including logic circuit components, electromagnetic shielding, chemical sensing, and anticorrosion. Humidity sensor can be used to monitor relative humidity (RH) in various environments. We only focus on the fabrication of conducting polymer OFETs with top contact to measure humidity and verify I-V properties. The current saturation (I Sat ) of p-type OFETs was 0.8 μA, while the threshold voltage V Th was 2.2V. The results of FESEM have been perform to con rm that deposited thin lm grown on the substrate is purely uniform. The Proposed sensor shows that organic gate dielectrics are a low-cost alternative to inorganic gate dielectrics with good electrical performance. The proposed OFET-based sensors have a number of bene ts, such as high sensitivity, low cost, quick response, and physical exibility.

Humidity Sensor Synaptic Device Based on Bilayer p–n Heterojunction Transistors for Maintaining Humidity Homeostasis

“…19 Biswas et al employed a spin coating method to produce flexible humidity sensors based on FET technology. 20 Here, with the unique electrical properties and high surfaceto-volume ratio of graphene oxide (GO) as well as the exceptional electron transport capability of poly [5,6- parallel programming and binary neuroplasticity emulation. In varying levels of humidity, the device exhibited distinct current responses.…”

“…Wu et al utilized an inkjet printing technique to incorporate branched polyethylenimine (PEI) into a FET-type platform, enabling low-humidity detection at room temperature . Biswas et al employed a spin coating method to produce flexible humidity sensors based on FET technology …”