2002
DOI: 10.1080/713738250
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Polyaniline as Transparent Carrier Injection Electrode Compatible with Low Temperature Poly(p-Pheniline Vinylene) Conversion Process

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Cited by 6 publications
(5 citation statements)
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“…Between 450 and 700 nm, the 60 nm POMA layer practically does not absorb, thus forming a ''window'' for PPV emission. For comparison, we show the absorption spectrum for a 180 nm PAni film deposited in situ 10,29 and the emission spectrum of a spin-coated poly͓2-methoxy-5-(2Ј-ethylhexyloxy͒-1,4-p-phenylene vinylene͔ ͑MEH-PPV͒ film. 29 The optical window for PAni, from 475 to 600 nm, is narrower than for the POMA film, leading to a larger overlap in the low energy region with PPV emission.…”
Section: Resultsmentioning
confidence: 99%
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“…Between 450 and 700 nm, the 60 nm POMA layer practically does not absorb, thus forming a ''window'' for PPV emission. For comparison, we show the absorption spectrum for a 180 nm PAni film deposited in situ 10,29 and the emission spectrum of a spin-coated poly͓2-methoxy-5-(2Ј-ethylhexyloxy͒-1,4-p-phenylene vinylene͔ ͑MEH-PPV͒ film. 29 The optical window for PAni, from 475 to 600 nm, is narrower than for the POMA film, leading to a larger overlap in the low energy region with PPV emission.…”
Section: Resultsmentioning
confidence: 99%
“…This has been shown in several instances, as follows: ͑i͒ A LBL PPV film coating a POMA layer has a wider window for emission than that reported for PAni layers in previous work. 10 ͑ii͒ When POMA is adsorbed onto ITO, the barrier height for hole injection is decreased. ͑iii͒ The electrical properties of the POMA layer can be preserved at high temperatures when a PPV film is deposited.…”
Section: Discussionmentioning
confidence: 99%
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“…We seek for optimized conditions for in situ deposition of PAni films that may lead thin films with desirable thicknesses ranging from a few nanometers to around 200 nm. We show that films with thicknesses as low as ∼25 nm could be prepared by the in situ technique which could be used, for example, as hole injecting layer in electroluminescent devices [24][25][26][27]. In order to investigate the growth process, we analyze the adsorption kinetics for the film fabrication using atomic force microscopy and UV-vis spectroscopy.…”
Section: Introductionmentioning
confidence: 99%