2014
DOI: 10.1016/j.apsusc.2014.08.192
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Polyamide–thallium selenide composite materials via temperature and pH controlled adsorption–diffusion method

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Cited by 11 publications
(6 citation statements)
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“…Thallium selenide can then be formed during the reactions of these ions with Tl + cations [31] as described by the following reactions (1-3):…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Thallium selenide can then be formed during the reactions of these ions with Tl + cations [31] as described by the following reactions (1-3):…”
Section: Resultsmentioning
confidence: 99%
“…) from aqueous solutions into the PA substrate [30]. After treating these anion-containing polyamide samples with aqueous solutions of metal cations different binary metal selenide layers on the polymer surface were obtained [31][32][33][34][35][36][37].…”
Section: Introductionmentioning
confidence: 99%
“…The results showed a mixture of several compounds, in which also some quantities of Tl 2 O 3 , S 8 , and Tl(OH) 3 were present. [105,108] In 2014, Ivanauskas et al prepared a composite material, depositing Tl x Se y on polyamide [239,247] and in 2015 thallium selenide layers on polycaproamide (PA 6). [248] These studies were performed using the adsorption-diffusion method for the preparation of layers.…”
Section: Thallium Chalcogenides Thin Films and Their Fabricationmentioning
confidence: 99%
“…Only chemical methods used in the formation process of cadmium chalcogenide thin layers allow the development of good quality thin layers through the application of low temperature conditions. The layers of chalcogenides of metals of I-II B groups on the substrate of an amphiphilic polyamide 6 (PA 6) were successfully obtained by the wet chemical method of adsorption-diffusion technology [17][18][19][20][21]. Very similar to this method the successive ionic layer adsorption and reaction (SILAR) one of the wet chemical methods is widely used to form these layers on a glass substrate [22][23][24].…”
Section: Introductionmentioning
confidence: 99%