The photocatalytic properties of titanium dioxide layers on metal sheets prepared via cold gas spraying have been investigated employing the ISO 22197‐2 standard test for acetaldehyde degradation in the gas phase. The contact between the TiO2 and the metal substrate can be described as a Schottky contact. A depletion region is formed at the semiconductor–metal interface leading to an enhanced separation of the photoinduced charge carriers. Thus, the lifetime of the e–/h+ pair is prolonged. The variation of process parameters, such as temperature and pressure, during the CGS preparation leads to different photocatalytic properties of the obtained TiO2 layers. Under high pressure and temperature even visible light active TiO2 coatings are prepared. The CGS technique allows the formation of thin TiO2 films without any binders exhibiting high photocatalytic activities in the same range as the pure powders employed for their preparation.
Schematic diagram presenting the Schottky contact of an n‐type semiconductor and met al. Ef is the Fermi level, VB and CB are the valence and conduction band of the semiconductor, respectively. A proposed degradation pathway of acet‐aldehyde at the solid/gas interface is depicted.
(© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)