Poly(sulfur nitride): The First Polymeric Metal

Banister, Arthur J.; Gorrell, Ian B.

doi:10.1002/(sici)1521-4095(199812)10:17<1415::aid-adma1415>3.3.co;2-c

Cited by 24 publications

(52 citation statements)

References 84 publications

(120 reference statements)

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“…This process is reminiscent of a topotactic ring-opening polymerization of S 2 N 2 . [30] We observe neither shrinkage nor expansion of the written structure. This is an important advantage over photoresists, like the most commonly used SU-8, which shrinks approximately 7 % during development, [10] causing structural distortions.…”

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confidence: 69%

Direct Laser Writing of Three‐ Dimensional Photonic Crystals with a Complete Photonic Bandgap in Chalcogenide Glasses

et al. 2006

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The concept of three-dimensional (3D) photonic crystals (PCs) and photonic bandgap materials [1,2] was introduced nearly twenty years ago. However, the fabrication of highquality 3D structures for the optical regime still remains a challenge. Three techniques have been discussed: i) direct semiconductor fabrication by using a layer-by-layer (LbL) method, combining high-precision alignment and wafer-fusion techniques; [3][4][5][6] ii) templating by means of self-assembly of low-refractive-index colloidal microspheres; [7,8] and iii) holographic laser lithography [9,10] and direct laser writing (DLW) [11,12] to fabricate large-area, defect-free polymer templates. The latter two approaches require subsequent inversion [13][14][15] or double inversion [16,17] steps with high-refractiveindex materials. Here we present a novel approach, namely DLW in all-inorganic, high-refractive-index chalcogenide glasses. This approach combines the flexibility of DLW with the benefits of a direct fabrication method, hence eliminating the need for subsequent inversion. The fabrication of woodpile structures [18] with a complete gap of 3.5 % takes less than two hours. There are two stringent requirements for materials to be suitable for the fabrication of 3D PCs with an omni-directional photonic bandgap (PBG): i) the material has to be transparent over the wavelength region in which the PC is operated, and ii) the index of refraction should allow for an index contrast of at least 1.9 in the final structure to open the PBG.[18] Unfortunately, most of the materials that fulfill requirement (i) do not comply with requirement (ii). This is especially awkward as most of the materials suitable for fabrication by using lithographic techniques like holographic laser lithography [9,10] and direct laser writing [11,12] belong to this group (i.e., all-organic photoresists). Prominent materials such as silicon or gallium arsenide, which fulfill both requirements, are however not suitable for 3D lithographic techniques. Therefore, these materials are usually incorporated by means of chemical vapor deposition (CVD) techniques into suitable templates, which are then removed at a later stage. [14,17] Direct fabrication of 3D PCs in high-index materials seems preferable, but requires fabrication in a LbL assembly. [19] Each layer has to be fabricated with a whole set of lithography and etching steps. [3][4][5][6] Furthermore, ultra-precise alignment and wafer fusion for each additional layer is required at the cost of fabrication speed. Therefore, a technique combining both direct fabrication into a high-index material with the high flexibility, speed, and accuracy of direct laser writing is highly desirable.Here, we present for the first time direct laser written 3D PCs with a PBG made from As 2 S 3 chalcogenide glasses. These materials are amorphous semiconductors with high transparency throughout the near-infrared and infrared spectral region. The index of refraction lies between 2.45 and 2.53, [20] sufficient to open a PBG. In As 2 S 3 the positi...

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confidence: 69%

Direct Laser Writing of Three‐ Dimensional Photonic Crystals with a Complete Photonic Bandgap in Chalcogenide Glasses

et al. 2006

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“…210 The properties of poly(thiazyl) have been comprehensively reviewed by Labes 37 and by Banister and Gorrell, 38 and only a short summary of the salient characteristics of this material is presented here. Poly(thiazyl) is a highly conducting material, with a room temperature conductivity of approximately 1000 S/cm.…”

Section: Thiazyl Radicals As "Advanced Materials"mentioning

confidence: 99%

The Synthesis and Characterization of Stable Radicals Containing the Thiazyl (SN) Fragment and Their Use as Building Blocks for Advanced Functional Materials

Hicks

2010

Stable Radicals

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“…For example, S 2 •• falls into the thermodynamic sink S 8 [11], while O 8 can only be isolated at low temperatures and high pressures [12]. SN • dimerizes to S 2 N 2 followed by further polymerization to (SN) x [14]; and SNS • is a very unstable species that has only been characterized by IR in an Ar matrix [15]. Heavier radicals based on Main Group elements are even more unstable with respect to the formation of polymers/oligomers.…”

Section: Introductionmentioning

confidence: 99%