Poly-Si Thin-Film Transistors Crystallized by Electron-Beam Annealing

Abstract

We have investigated an alternative electron-beam crystallization method for poly-Si thin-film transistor application. In contrast to the high crystallization temperature and long duration of conventional furnace crystallization, electron-beam crystallization could be performed at a low thermal budget even without substrate heating. It also provides better device characteristics than conventional furnace annealing, including smaller threshold voltage, higher mobility, smaller subthreshold swing, and larger I ON /I OFF ratio. The much smoother surface than the excimer laser annealed sample is also important for further gate oxide integrity and device performance improvement.

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

“…It is reported that the exposure of various materials to electron beams has been shown to modify their crystallinities and improve their electrical properties [33][34][35]. Although the electrical properties of ZnO films can be improved by annealing processes [36,37], this entails more processing time in ramping the temperature up and down.…”