Poly-Si TFT Performance

Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes

“…This fact again is a consequence of the poly-Si roughness at source and drain areas and of not fully optimized implantation-induced defects recovery by laser annealing. 15 On the other hand, the saturation region curve is not flat as expected. This nonideal trend is caused by two effects.…”

“…Furthermore, the triode region in the output curves is not perfectly linear because of not ideal contact resistance at source and drain contacts. This fact again is a consequence of the poly-Si roughness at source and drain areas and of not fully optimized implantation-induced defects recovery by laser annealing . On the other hand, the saturation region curve is not flat as expected.…”

“…The first one consists in the shrinkage of the channel length as the pinch-off point moves toward the source. This effect, which for a-Si and poly-Si TFTs is already visible for L = 10 μm, contributes with making the channel length shrink proportional to the drain voltage and drain current sloped in the saturation regime. , The second mechanism, which is more severe in other not shown n-channel devices, is the nonlinear multiplication of I d with V d due to the creation of electron–hole couples by impact ionizations close to the drain edge . In particular, for poly-Si, the presence of GBs and defects favor the impact ionization …”

“…16 , 17 The second mechanism, which is more severe in other not shown n-channel devices, is the nonlinear multiplication of I d with V d due to the creation of electron–hole couples by impact ionizations close to the drain edge. 18 In particular, for poly-Si, the presence of GBs and defects favor the impact ionization. 19 …”