This letter demonstrates the effect of cadmium selenide ͑CdSe͒ quantum dots on hole transport in poly͑3-hexylthiophene͒ ͑P3HT͒ thin films. Current-voltage characteristics of P3HT and P3HT:CdSe thin films have been studied in the temperature range of 288-85 K, in hole only device configurations, i.e., indium tin oxide ͑ITO͒/poly͑ethylene-dioxthiophene͒:polystyrenesulphonate ͑PEDOT:PSS͒/P3HT/Au and ITO/PEDOT:PSS/P3HT:CdSe/ Au. The incorporation of CdSe quantum dots in P3HT results in the enhancement in hole current and switches the transport from dual conduction mechanism, viz., trap and mobility models to only trap model. This is attributed to the reduction in characteristic trap energy from 60 to 32 meV and trap density from 2.5 ϫ 10 18 to 1.7ϫ 10 18 cm −3 . © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2955524͔Polymer-fullerene interpenetrating bulk heterojunctions ͑BHJs͒ are currently the most efficient approach in organic photovoltaics. Power conversion efficiency ϳ6% has already been realized 1 in poly ͑3-hexylthiophene͒: ͓6,6͔-phenyl-C61 butyric acid methyl ester ͑P3HT:PCBM͒ BHJs. However, there is a strong need to search for innovative ways to enhance further the efficiency and stability of these polymer solar cells. One of the promising approaches is the incorporation of different 2-5 inorganic nanoparticles such as titanium dioxide ͑TiO 2 ͒, cadmium telluride ͑CdTe͒, cadmium selenide telluride ͑CdSeTe͒, zinc oxide ͑ZnO͒, etc., into host conducting polymers such as poly͓2-methoxy, 4-͑2-ethylhexoxy͒-1,3-phenylene vinylene͔ ͑MEH-PPV͒ and P3HT. Encouraging results are already available in literature on the preparation of solar cells using polymer P3HT and CdSe nanostructures. [6][7][8] To improve further the performance of P3HT:CdSe based polymer solar cells it is essential to understand their device physics especially the role of nanoparticles/quantum dots on charge transport properties of the composite matrix. In this letter we have investigated the effect of dispersion of CdSe quantum dots on hole transport in P3HT thin films. Current-voltage ͑J-V͒ characteristics of P3HT thin films were studied in hole only device configuration, i.e., indium tin oxide ͑ITO͒/poly͑ethylene-dioxythiophene͒:polystyrenesulphonate ͑PEDOT:PSS͒/P3HT/Au in the temperature range of 288-85 K, without and with dispersion of CdSe quantum dots of size ϳ5 nm. It has been found here that the incorporation of CdSe quantum dots in P3HT switches its hole transport from a dual conduction mechanism, viz., trap and mobility models to only trap model. This finding explicitly reveals the pivotal role played by CdSe quantum dots in governing charge transport of P3HT:CdSe composite films that would prove beneficial in the development of improved solar cells based on organicinorganic composites.Samples for both pure P3HT and P3HT:CdSe composite films were prepared under identical conditions in hole only device configurations, i.e., ITO ͑ ϳ 4.8 eV͒/PEDOT:PSS ͑80 nm͒ / P3HT͑ϳ180nm͒ / Au ͑ ϳ 5.2 eV͒ and ITO ͑ ϳ 4.8 eV͒/PEDOT:PSS ͑80 nm͒/P3HT:...