Poly (Fluoro Methacrylate) as Highly Sensitive, High Contrast Positive Resist

Kakuchi, Masami; Sugawara, Shinji; Murase, Kei; Matsuyama, Kentaro

doi:10.1149/1.2133127

Cited by 52 publications

(18 citation statements)

References 1 publication

(2 reference statements)

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“…Indeed these materials combine the good film-forming characteristics of acrylic polymers, with excellent optical properties, improved outdoor stability, 1 -4 low refractive index and surface tension. 5 In particular they are used for several advanced applications as clad for optical fibers, 6 in microlithography, 7 as heat-resistant optical materials, 8 for protecting surfaces particularly against humidity 9 and so on. 10 The rapid development arising from the above interest was not flanked by an adequate fundamental characterization as far as NMR studies are concerned.…”

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confidence: 99%

13C NMR Characterization of Polymers from 2,2,2-Trifluoroethyl Methacrylate

Passaglia

Aglietto

Ciardelli

et al. 1994

Polym J

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ABSTRACT:In an attempt to develop structural characterisation of polymers from fluorinated acrylic derivatives, a detailed 13 C NMR analysis of free radical and anionic poly(2,2,2-trifluoroethyl methacrylate) (poly(TFEM)) was performed as compared to relevant literature studies concerning the corresponding methyl methacrylate (MMA) polymers. On the other side, the moderately syndiotactic microstructure of the poly(TFEM) samples fits very well with that of corresponding poly(MMA) samples and can be interpreted on the basis of the same statistical distribution of triads. Thus it appears that the presence of the -CHr--CF 3 group does not affect in a determining way the stereochemistry of the polymerization. According to this final statement, anionic initiators give prevailingly isotactic poly(TFEM) as detected by 13 C NMR.

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mentioning

confidence: 99%

13C NMR Characterization of Polymers from 2,2,2-Trifluoroethyl Methacrylate

Passaglia

Aglietto

Ciardelli

et al. 1994

Polym J

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“…In order to increase the main chain scission susceptibility of polymethacrylates, various copolymers and analogs were synthesized and evaluated as resist polymers [5][6][7][8][9][10][11][12]. Among the polymethacrylates, poly(fluorobutyl methacrylate), developed for electron beam and x-ray lithography [13], appears to be the most sensitive to deep UV radiation [14].…”

Section: Polymethacrylate Resistsmentioning

confidence: 99%

Evolution and Progress of Deep UV Resist Materials.

Itô

1998

J. Photopol. Sci. Technol.

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It has been almost thirty years since the first deep UV exposure was carried out and almost twenty five years since the term "deep UV lithography" was coined. Although resist systems classified as "chemical amplification resists" are the workhorse for the 248 nm deep UV lithography, the resist materials have evolved significantly in the realm of deep UV lithography as well as within the boundary of chemical amplification. This paper describes the evolution and progress of the deep UV (248-193 nm) positive resist materials that have occurred in the last quarter century.

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“…Nonmethacrylate polymers exist beyond the dotted lines. Figures 6,7,and 8 show the relations between inverse number-average molecular weight and y-radiation dosage for positive resists. Polymers of halogenated methacrylate such as PClSEtMA, PF,EtMA, and PClBPhMA gave relatively large deviations from the linear relationships of lmn vs. radiation dosage.…”

Section: Contribution Of Sputtering Effect On Resist Durabilitymentioning

confidence: 99%

Dry etching durability of positive electron resists

Harada

1981

J of Applied Polymer Sci

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SynopsisThe effects of positive electron resist structures and G values for scission on dry etching durability have been studied with regard to plasma etching, reactive sputter etching, and plasma ashing.Polymers of aromatic methacrylates, especially poly(a-methylstyrene), all of which contain a benzene ring in the side chain, exhibit superior durability for each etching system. On the other hand, polymers of fluorinated and chlorinated methacrylates show low durability compared with the nonsubstituted polymethacrylates. In addition, they vary in durability with respect to the etching gas used. The sputtering effect which is induced by ion bombardment in flat bed-type reactors produces a significant loss in thickness of positive resists. Rough correlations between dry etching rates and Gs(scission) as the indication of sensitivity were obtained. The large dispersion of the correlaticns implies the possibility of more useful positive electron resists of high durability and high sensitivity.

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Poly (Fluoro Methacrylate) as Highly Sensitive, High Contrast Positive Resist

Abstract: not Available.

Cited by 52 publications

References 1 publication

13C NMR Characterization of Polymers from 2,2,2-Trifluoroethyl Methacrylate

13C NMR Characterization of Polymers from 2,2,2-Trifluoroethyl Methacrylate

Evolution and Progress of Deep UV Resist Materials.

Dry etching durability of positive electron resists

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