Poling Field Dependence of Ferroelectric Properties and Crystal Orientation in Rhombohedral Lead Zirconate Titanate Ceramics

Abstract

Methods to measure the burdens of voltage transformers (VTs) and current transformers (CTs) in situ in instrument transformer test systems have been developed using non-reactive resistors connected in series with the VT secondary and in parallel with the CT secondary. This development was based on a theoretical analysis of the equivalent circuits of the instrument transformers. The burden values for the instrument transformers are obtained by measuring the ratio error (and phase displacement) with varying resistors. The values of the transformer burdens obtained using this method were consistent, within acceptable tolerances, with those measured using conventional methods.

Ferroelectric 90° Domain Evaluation in Tetragonal Pb(Mg1/3Nb2/3)O3–PbTiO3 Ceramics

“…However, it is also known that the 1801 domain reversal occurs easily, as it results in no deformation, 14,15 and that the 1801 domain reversal occurs when the poling electric field approaches the coercive field (E c ). 16 In our case, E c was found from the polarization hysteresis loop to be 4.1 kV/cm. Thus, after being poled under 5 kV/cm most of the 1801 domains in the sample should be reversed.…”

“…It is known that the 180° domain reversal also contributes to the piezoelectric constant ( d 33 ). However, it is also known that the 180° domain reversal occurs easily, as it results in no deformation, 14,15 and that the 180° domain reversal occurs when the poling electric field approaches the coercive field ( E c ) 16 . In our case, E c was found from the polarization hysteresis loop to be 4.1 kV/cm.…”

Poling of hard ferroelectric PZT ceramics

“…[2][3][4][5][6][7][8] It has been verified that there is a direct dependence between the dielectric and piezoelectric properties and the degree of domain orientation set by poling conditions. [9][10][11][12][13][14][15] Poling of hard ferroelectric ceramics is not an easy process. Pinning of domain walls due to defects prevents the material to be switched by moderate poling conditions.…”

Influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 thin films

“…[11][12][13] Recently, we have found that bipolar pulse poling, where intermittent ac triangle wave larger than coercive field of the PZT thin films is applied, enhances the piezoelectric property of tetragonal composition (Zr/Ti = 30/70) PZT (tetra-PZT) thin films. 14 In the previous study, we have fabricated piezoelectric microcantilevers using 1.9-µm-thick tetra-PZT thin films.…”