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Nardis, Andrea De; Pellegrini, Vittorio; Colombelli, R.; Beltram, Fabio; Vanzetti, L.; Franciosi, A.; Bajaj, K. K.

doi:10.1103/physrevb.61.1700

Cited by 18 publications

(17 citation statements)

References 24 publications

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“…Again the use of statically screened Coulomb potential significantly underestimates the values of B E . The reasons for the choice of physical parameters of ZnSe we have used in our calculations have been discussed in some detail by Nardis et al [11].…”

Section: Results and Conclusionmentioning

confidence: 99%

Binding energies of excitons in II–VI compound‐semiconductor based quantum well structures

Senger

Bajaj

2004

Physica Status Solidi (b)

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We present a brief description of the calculation of the variation of the binding energy of the heavy-hole exciton as a function of well width in quantum well structures composed of II-VI compound semiconductors including the effects of exciton-optical phonon interaction as formulated by Pollmann and Büttner [J. Pollmann and H. Büttner, Phys. Rev. B 16, 4480 (1977)], and of particle masses and dielectric mismatches between the well and the barrier layers. We compare the results of our calculations with the available experimental data in ZnSe/MgS, ZnSe/Mg 0.15 Zn 0.85 Se, and ZnS/Mg 0.19 Zn 0.81 S quantum well structures and find a good agreement.

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Section: Results and Conclusionmentioning

confidence: 99%

Binding energies of excitons in II–VI compound‐semiconductor based quantum well structures

Senger

Bajaj

2004

Physica Status Solidi (b)

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“…4 by magnetotransmission, a technique already applied to the ZnSe/ ZnCdSe by several authors. 36,37 The higher excited states of the excitons such as the 2s transitions are not visible in the zero-field transmission spectra but the oscillator strengths of the higher excited states of the excitons are increased when a magnetic field is applied parallel to the growth direction ͑Faraday geometry͒. The transitions are then detectable in the transmission spectra, as shown in Fig.…”

Section: B Measurement Of the Exciton Binding Energiesmentioning

confidence: 99%

Highly confined excitons in MgS/ZnSe quantum wells grown by molecular beam epitaxy

et al. 2001

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MgS has been grown by molecular beam epitaxy in the zincblende crystal structure on GaAs ͑100͒ substrates using a technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619Ϯ0.0001 nm and Poisson's ratio was estimated to be 0.425. The success of this growth technique has allowed the fabrication of MgS/ZnSe/MgS quantum wells that show sharp photoluminescence and transmission spectra indicating less than 1 ML fluctuations of the well widths. The small inhomogeneous broadening of the samples has allowed magneto-optical studies of the exciton absorption where the observation of higher excited exciton states have been observed and the exciton binding energies, E X , have been measured directly, notably E X (1s -2s) Ͼh LO in a 5 nm well. The full width at half maximum of the heavy-hole absorption transitions for this sample has been measured as a function of temperature and no broadening of the excitonic transitions has been observed up to 150 K showing that the exciton-LO phonon scattering has been suppressed.

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“…Various calculations of the exciton binding energies have been presented to interpret experimental data obtained in ZnCdSe/ZnSe QW heterostructures, 19,20 leading to different levels of agreement according to the choices of physical parameters and the completeness of the models used for the calculations. We will show that accounting for the excitonphonon interaction improves this agreement and reduces uncertainty in the values of physical parameters.…”

Section: Introductionmentioning

confidence: 99%

Binding energies of excitons in polar quantum well heterostructures

2003

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We present a calculation of the variation of the binding energy of a heavy-hole exciton in a highly ionic quantum well structure, as a function of well width using a variational approach. We include the effects of exciton-phonon interaction and of mismatches between the particle masses and the dielectric constants of the well and barrier layers. The effect of exciton-phonon interaction is described in terms of an effective potential between the electron and the hole, derived by Pollmann and Büttner ͓J. Pollmann and H. Büttner, Phys. Rev. B 16, 4480 ͑1977͔͒ using an exciton-bulk optical-phonon Hamiltonian. We find that the values of the exciton binding energies we calculate agree very well with those obtained using a more rigorous but a complicated approach due to Zheng and Matsuura ͓R. Zheng and M. Matsuura, Phys. Rev. B 58, 10 769 ͑1998͔͒ in which they consider an exciton interacting with the confined-longitudinal optical phonons, interface phonons, and half-space phonons. Our method has the advantage of being considerably simpler, more efficient to use and is much easier to generalize to include the effects of external perturbations such as electric and magnetic fields. We compare the results of our calculations with the available experimental data in a few ionic quantum well structures and find a very good agreement. We show that for an appropriate understanding of the experimental data in ionic quantum well structures one must properly account for the exciton-phonon interaction.

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Polaronic excitons inZnxCd1−xSe/

Cited by 18 publications

References 24 publications

Binding energies of excitons in II–VI compound‐semiconductor based quantum well structures

Binding energies of excitons in II–VI compound‐semiconductor based quantum well structures

Highly confined excitons in MgS/ZnSe quantum wells grown by molecular beam epitaxy

Binding energies of excitons in polar quantum well heterostructures

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