Polaron relaxation channel in InAs/GaAs self-assembled quantum dots

Zibik, E. A.; Wilson, L. R.; Green, R. P.; Wells, J.‐P. R.; Phillips, P. J.; Carder, D.A.; Cockburn, J. W.; Skolnick, M. S.; Steer, Matthew J.; Liu, H. Y.; Hopkinson, M.

doi:10.1088/0268-1242/19/4/105

Cited by 8 publications

(1 citation statement)

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“…where hω TO and γ are the frequency and the reverse time of TO-phonon decay, respectively. Using (14), we can rewrite expression (13a) in the form [2]…”

Section: The Fano Resonance Parameters Without Regard For a Chemical ...mentioning

confidence: 99%

Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors

Aleshkin¹,

Burdeiny²,

Gavrilenko³

2010

Semicond. Sci. Technol.

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We apologize to the readers of Semiconductor Science and Technology for erroneous data in the tables 1 and 2. Unfortunately, our lack of attention led to incorrect numerical values for line width (η) and Q(η) parameter in table 1 and for almost all columns in table 2 (except LO-phonon lifetime). Here we provide the correct versions of the two tables.We have to make one note. From the corrected table 2 it is clearly seen that the value of the ratio τ LO /h for InSb in table 2 is less than unity, so our theory is not valid for InSb. The actual parameters of the Fano resonance should significantly differ from those mentioned in table 2 for this semiconductor. But we kept the row with InSb for illustrative purposes.

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“…where hω TO and γ are the frequency and the reverse time of TO-phonon decay, respectively. Using (14), we can rewrite expression (13a) in the form [2]…”

Section: The Fano Resonance Parameters Without Regard For a Chemical ...mentioning

confidence: 99%

Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors

Aleshkin¹,

Burdeiny²,

Gavrilenko³

2010

Semicond. Sci. Technol.

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Polaron decay and inter‐level transfer in InAs/GaAs self‐assembled quantum dots

Zibik

Wilson

Green

et al. 2004

phys. stat. sol. (c)

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PACS 78.47.+p, 78.67.Hc Using energy and temperature dependent far-infrared pump-probe spectrsocopy we demonstrate that polarons in InAs/GaAs quantum dots decay to two equal energy phonons. An additional decay process involving polaron transfer between closely spaced (~5meV) excited states has also been observed, for which we find very good agreement between our experimental results and an acoustic phonon assisted transfer model.

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