The use of layered, 2D perovskites can improve the stability of metal halide perovskite thin films and devices. However, the charge carrier transport properties in layered perovskites are still not fully understood. Here, the sum of the electron and hole mobilities (ÎŁÎŒ) in thin films of the 2D perovskite PEA2PbI4, through transient electronically contacted nanosecondâtoâmillisecond photoconductivity measurements, which are sensitive to longâtime, longârange (micrometer length scale) transport processes is investigated. After careful analysis, accounting for both earlyâtime recombination and the evolution of the excitonâtoâfreeâcarrier population, a longârange mobility of 8.0 +/â 0.6 cm2 (V s)â1, which is ten times greater than the longârange mobility of a comparable 3D material FA0.9Cs0.1PbI3 is determined. These values are compared to ultraâfast transient timeâresolved THz photoconductivity measurements, which are sensitive to earlyâtime, shorterârange (tens of nm length scale) mobilities. Mobilities of 8 and 45 cm2 (V s)â1 in the case of the PEA2PbI4 and FA0.9Cs0.1PbI3, respectively, are obtained. This previously unreported concurrence between the longârange and shortârange mobility in a 2D material indicates that the polycrystalline thin films already have singleâcrystalâlike qualities. Hence, their fundamental charge carrier transport properties should aid device performance.