Polarized Raman scattering study of PSN single crystals and epitaxial thin films

Abstract

This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc 0:5 Nb 0:5 O 3 (PSN) single crystals and epitaxially compressed thin films grown on (100)-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm À1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.

Raman scattering yields cubic crystal grain orientation

“…Raman scattering measurements were carried out using a Renishaw Raman microscope with 514 nm Argon laser in back-scattering geometry and a very similar set-up as the one used in our previous systematic polarised Raman scattering investigations 18,19 .…”