Polarized Emission from Single GaN Quantum Dots Grown by Molecular Beam Epitaxy

Amloy, Supaluck; Yu, K. H.; Karlsson, K. F.; Farivar, Rashid; Andersson, T. G.; Holtz, P. O.

doi:10.1063/1.3666493

Cited by 2 publications

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“…III-nitride QDs have attractive properties in terms of deep confinement potentials needed for high temperature operation, whilst the small split-off energy of the nitrides causes a high degree of linear polarization already for weakly asymmetric quantum dots [3]. The demonstration of single photon emission at room temperature was recently reported for a GaN QD [4].…”

Section: Introductionmentioning

confidence: 99%

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

Jemsson

Machhadani²,

Holtz³

et al. 2015

Nanotechnology

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We report on excitonic single photon emission and biexcitonic photon bunching from an InGaN quantum dot formed on the apex of a hexagonal GaN micropyramid. An approach to suppress uncorrelated emission from the pyramid base is proposed, a metal film is demonstrated to effectively screen background emission and thereby significantly enhance the signal-to-background ratio of the quantum dot emission. As a result, the second order coherence function at zero time delay g (2) (0) is significantly reduced (to g (2) (0) = 0.24, raw value) for the excitonic autocorrelation at a temperature of 12 K under continuous wave excitation, and a dominating single photon emission is demonstrated to survive up to 50 K. The deterioration of the g (2) (0)-value at elevated temperatures is well understood as the combined effect of reduced signal-to-background ratio and limited time resolution of the setup. This result underlines the great potential of site controlled pyramidal dots as sources of fast polarized single photons.

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Section: Introductionmentioning

confidence: 99%

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

Jemsson

Machhadani²,

Holtz³

et al. 2015

Nanotechnology

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“…Recently, the small split-off energy of the nitrides was identified as the main cause of the high degree of polarization for asymmetric quantum dots. 9 The nitrides are thus more suitable for the generation of polarized photons emission than other materials such as InAs and GaAs with large split-off energy.…”

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confidence: 99%

Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot

Jemsson

Machhadani

Karlsson

et al. 2014

Applied Physics Letters

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We report on the observation of linearly polarized single photon antibunching in the excitonic emission from a site-controlled InGaN quantum dot. The measured second order coherence function exhibits a significant dip at zero time difference, corresponding to g(m)(2) (0) = 0: 90 under continuous laser excitation. This relatively high value of g(m)(2) (0) is well understood by a model as the combination of short exciton life time (320 ps), limited experimental timing resolution and the presence of an uncorrelated broadband background emission from the sample. Our result provides the first rigorous evidence of InGaN quantum dot formation on hexagonal GaN pyramids, and it highlights a great potential in these dots as fast polarized single photon emitters if the background emission can be eliminated.

Funding Agencies|Carl Trygger Foundation for Scientific Research; Swedish Research Council (VR); Nano-N consortium - Swedish Foundation for Strategic Research (SSF); Knut and Alice Wallenberg Foundation; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Font-D, at Linkoping University

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Polarized Emission from Single GaN Quantum Dots Grown by Molecular Beam Epitaxy

Cited by 2 publications

References 0 publications

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot

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