Polarization switching in ultrathin polyvinylidene fluoride homopolymer ferroelectric films

Paramonova, Ekaterina; Filippov, Sergey; Gevorkyan, Varsenik; Avakyan, L. A.; Meng, Xiangjian; Tian, Bobo; Wang, J. L.; Bystrov, Vladimir

doi:10.1080/00150193.2017.1296317

Cited by 22 publications

(21 citation statements)

References 33 publications

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“…This was shown experimentally [ 13 , 14 , 15 , 16 ] and theoretically (in first-principle calculations [ 17 ], including with molecular dynamics (MD) approaches [ 18 ] and using quantum–mechanical semi-empirical methods [ 17 , 18 , 19 , 20 ]). The main condition for the applicability of the LGD theory in such systems is its homogeneity along the polarization switching direction.…”

Section: Introductionmentioning

confidence: 91%

Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis

et al. 2020

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The polarization switching kinetics of nanosized ferroelectric crystals and the transition between homogeneous and domain switching in nanoscale ferroelectric films are considered. Homogeneous switching according to the Ginzburg-Landau-Devonshire (LGD) theory is possible only in two-dimensional (2D) ferroelectrics. The main condition for the applicability of the LGD theory in such systems is its homogeneity along the polarization switching direction. A review is given of the experimental results for two-dimensional (2D) films of a ferroelectric polymer, nanosized barium titanate nanofilms, and hafnium oxide-based films. For ultrathin 2D ferroelectric polymer films, the results are confirmed by first-principle calculations. Fitting of the transition region from homogeneous to domain switching by sigmoidal Boltzmann functions was carried out. Boltzmann function fitting data enabled us to correctly estimate the region sizes of the homogeneous switching in which the LGD theory is valid. These sizes contain several lattice constants or monolayers of a nanosized ferroelectrics.

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Section: Introductionmentioning

confidence: 91%

Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis

et al. 2020

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“…The ferroelectric hysteresis loop shown in Figure 6b is caused by the ferroelectric polarization switching in P(VDF-TrFE) thin films, and its polarization is attributed to the molecules' orientation when an extrinsic electric field is applied to the P(VDF-TrFE) thin films. [110] In 2008, Salvatore et al first experimentally demonstrated P(VDF-TrFE)-based NCFET using MFIS gate stack, [51] as shown in Figure 6c. Figure 6d displays measured electrical results (I D -V G curve) at room temperature.…”

Section: Organic Ferroelectric P(vdf-trfe) Ncfetmentioning

confidence: 99%

“…P(VDF‐TrFE) is a copolymer PVDF with trifluoroethylene (TrFE); Figure a presents a schematic of its molecule structure. The ferroelectric hysteresis loop shown in Figure b is caused by the ferroelectric polarization switching in P(VDF‐TrFE) thin films, and its polarization is attributed to the molecules' orientation when an extrinsic electric field is applied to the P(VDF‐TrFE) thin films …”

Section: Experimental Researches On Ncfetmentioning

confidence: 99%

Ferroelectric Negative Capacitance Field Effect Transistor

Wang

et al. 2018

Adv Elect Materials

115

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such as steep subthreshold swing (SS), high switching ratio (I on /I off ), adjustable hysteresis, compatibility with standard semiconductor fabrication processes, and environmental friendliness, promotes NCFET to be a promising candidate to lower power consumption and solve the heat problem in ULSI.As early as the 1960s, the concept of negative capacitance (NC) was proposed in amorphous semiconductor chalcogenides thin film, [25,26] then the NC effect was observed in several devices, such as p-n junctions, [27,28] Schottky diodes, [29,30] metal-insulator-metal diodes, [31] and others. [32][33][34][35] Concretely, the NC effect occurs when the reciprocal of the second derivation of potential energy U with respect to the ferroelectric polarization charge Q F is negative, which is usually achieved during the switching process of ferroelectric polarization. [36,37] NCFET achieves steep SS through the NC voltage amplification effect by adding a ferroelectric layer into the transistor gate stack. [22] NCFET simulation methods vary according to the types of transistor gate structures-metal ferroelectric semiconductor field-effect transistor (MFSFET), metal ferroelectric insulator semiconductor field-effect transistor (MFISFET), and metal ferroelectric metal insulator semiconductor field-effect transistor (MFMISFET). However, the basic principle is to realize a match between the channel charge Q and the ferroelectric polarization charge P, [38][39][40][41][42] no matter what the specific gate structure is.Furthermore, the influencing factors of NCFET's electrical properties have been qualitatively analyzed and summarized according to numerous simulation results. Commonly, a tradeoff exists between SS and hysteresis, [22] and we can design and manipulate the gate structure, [41] ferroelectric thickness (t Fe ), [22] ferroelectric material parameters, [38] silicon doping concentration, [39,43] temperature, [44] work frequency, [45][46][47][48] and high-κ dielectric [23,49,50] to optimize the electrical performance of NCFET and meet specific practical application requirement.The experimental researches on NCFETs can be mainly classified into three categories based on various kinds of ferroelectrics. First, the NCFET based on organic ferroelectric-poly(vinylidene difluoride-trifluoroethylene)[P(VDF-TrFE)], has been experimentally demonstrated, and achieves minimum SS (SS min ) = 13 mV dec −1 with small hysteresis. [51,52] Second, the NCFET based on lead zirconate titanate (PZT), a type of inorganic perovskite-type ferroelectric, exhibits hysteretic switching with With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralargescale integration (ULSI) is limited by the physical barrier termed "Boltzmann Tyranny." Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field-effect transistor (Fe-NCFET) is proposed in order to reduce the subthresho...

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“…Next, Tagantsev et al put forward the nucleation-limited switching (NLS) model as an alternative model for the polarization switching process [86], in which the region-by-region nucleation and switching take much longer than the domain wall motion. While studying ultra-thin PVDF and P(VDF-TrFE) films, a domain-free intrinsic mechanism that did not include the ordinary nucleation and domain growth processes was developed [84,110,111]. Here, the three previously mentioned theoretical models of ferroelectric switching are summarized.…”

Section: Physical Theorymentioning

confidence: 99%

“…Note that, when the intrinsic switching dominated, the coercive voltage was not more than 5 V because of the extreme small thickness of films. Recently, Paramonova et al simulated the intrinsic polarization switching process of PVDF and P(VDF-TrFE) by using the MDS method, and they demonstrated a coercive field lying within 500-2500 MV/m and a critical thickness of 3-6 nm [111].…”

Section: Intrinsic Switchingmentioning

confidence: 99%

Characterization and Application of PVDF and Its Copolymer Films Prepared by Spin-Coating and Langmuir–Blodgett Method

et al. 2019

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Poly(vinylidene fluoride) (PVDF) and its copolymers are key polymers, displaying properties such as flexibility and electroactive responses, including piezoelectricity, pyroelectricity, and ferroelectricity. In the past several years, they have been applied in numerous applications, such as memory, transducers, actuators, and energy harvesting and have shown thriving prospects in the ongoing research and commercialization process. The crystalline polymorphs of PVDF can present nonpolar α, ε phase and polar β, γ, and δ phases with different processing methods. The copolymers, such as poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), can crystallize directly into a phase analogous to the β phase of PVDF. Since the β phase shows the highest dipole moment among polar phases, many reproducible and efficient methods producing β-phase PVDF and its copolymer have been proposed. In this review, PVDF and its copolymer films prepared by spin-coating and Langmuir–Blodgett (LB) method are introduced, and relevant characterization techniques are highlighted. Finally, the development of memory, artificial synapses, and medical applications based on PVDF and its copolymers is elaborated.

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Polarization switching in ultrathin polyvinylidene fluoride homopolymer ferroelectric films

Cited by 22 publications

References 33 publications

Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis

Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis

Ferroelectric Negative Capacitance Field Effect Transistor

Characterization and Application of PVDF and Its Copolymer Films Prepared by Spin-Coating and Langmuir–Blodgett Method

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