Polarization switching in nanoscale ferroelectric composites containing PVDF polymer film and graphene layers

Bystrov, Vladimir; Paramonova, Ekaterina; Meng, Xiangjian; Shen, Hong; Wang, Jing; Fridkin, V. M.

doi:10.1080/00150193.2022.2037936

Cited by 7 publications

(20 citation statements)

References 31 publications

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“…From this point of view, the memory elements of high-speed, non-volatile devices (DRAM, FeRAM) based on ferroelectric HBC (or materials similar to them in terms of properties and type of crystal structure) with a rectangular hysteresis loop (triglycine sulfate (TGS), ferric salt) are promising for modern computer technology [16][17][18][19][20][21][22][23][24][25][26][27][28]. They are characterized by abnormally high residual polarizations and long relaxation times (from 5 to 10 years), as well as a high thermal stability and mechanical strength [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44].…”

Section: Introductionmentioning

confidence: 99%

Influence of Quantum Effects on Dielectric Relaxation in Functional Electrical and Electric Energy Elements Based on Proton Semiconductors and Dielectrics

Kalytka,

Baimukhanov,

Neshina

et al. 2023

Applied Sciences

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Using the quasi-classical kinetic theory of dielectric relaxation, in addition to existing methods, fundamental mathematical expressions are built, which make it possible to more strictly consider the effects of the main charge carriers’ (protons’) tunneling on the numerical values of the molecular parameters (activation energy, equilibrium concentration) of protons in HBC. The formulas for calculating the statistically averaged non-stationary quantum transparency of a parabolic potential barrier for protons have been modernized by more stringent consideration of the effects of corrections caused by an external electric field. For the model of a double-symmetric potential well, a generalized nonlinear solution of the quasi-classical kinetic equation of dielectric relaxation in HBC was built. The phenomenological Bucci-Rive formula for thermally stimulated depolarization current density (TSDC) was first investigated, taking into account quantum transparency, for the case of a parabolic potential barrier. The choice of the parabolic shape of the potential barrier allowed, at a theoretical level, for the mathematical model of relaxation polarization to be brought closer to the conditions of the real spatial structure of the crystal potential field, in comparison with the rectangular potential barrier model. It has been found that quantum effects due to proton tunnel transitions significantly affect the mechanism of thermally stimulated depolarization currents in HBC, over a wide temperature range (50–550 K) and external field parameters (0.1–1 MV/m). Generalized solutions of the nonlinear kinetic equation, recorded considering the effects of field parameters on proton tunnel transitions, made it possible to significantly approximate the theoretical values of activation energies, equilibrium concentrations of protons and amplitudes of the theoretical maxima of the current density of thermally stimulated depolarization, according to their experimental values in the field of low-temperature (50–100 K) and high-temperature (350–550 K) maxima of TSDC density in HBC. For the first time, precision measurements of TSDC temperature spectra were carried out for chalcanthite crystals. The effects of alloying impurities concentrations and crystal calcination temperatures on the parameters of experimental maxima in the TSDC spectrum of chalcanthite were established. A physical mechanism of the quantum tunnel motion of protons in HBC with a complex crystal structure (crystalline hydrates, layered silicates, ferroelectric HBC (KDP, DKDP)) is described. The patterns found in this article indicate a fairly high degree of applied scientific significance for the obtained theoretical results, allowing for the further development of electrophysics and optoelectronics of heterogeneous structures (MIS, MSM) based on proton semiconductors and dielectrics (PSD) and their composites.

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Section: Introductionmentioning

confidence: 99%

Influence of Quantum Effects on Dielectric Relaxation in Functional Electrical and Electric Energy Elements Based on Proton Semiconductors and Dielectrics

Kalytka,

Baimukhanov,

Neshina

et al. 2023

Applied Sciences

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“…Mathematical modeling of quantum proton transfer in systems from thin potential barriers with potential pits containing quantum-dimensional energy levels is relevant in the development of physical principles and schemes for the operation of resonant tunnel diodes (RTD) and quantum field effect transistors based on PSCD, for microelectronics, radio electronics and quantum electronics [55][56][57][58][59].…”

Section: Scientific and Practical Significance Of The Study Resultsmentioning

confidence: 99%

Theoretical Studies of Nonlinear Relaxation Electrophysical Phenomena in Dielectrics with Ionic–Molecular Chemical Bonds in a Wide Range of Fields and Temperatures

et al. 2022

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This paper is devoted to the development of generalized (for a wide range of fields (100 kV/m–1000 MV/m) and temperatures (0–1500 K) in the radio frequency range (1 kHz–500 MHz)) methods for the theoretical investigation of the physical mechanism of nonlinear kinetic phenomena during the establishment of the relaxation polarization, due to the diffusion motion of the main charge carriers in dielectrics with ionic–molecular chemical bonds (hydrogen-bonded crystals (HBC), including layered silicates, crystalline hydrates and corundum–zirconium ceramics (CZC), etc.) in an electric field. The influence of the nonlinearities equations of the initial phenomenological model of dielectric relaxation (in HBC-proton relaxation) on the mechanism for the formation of volume–charge polarization in solid dielectrics is analyzed. The solutions for the nonlinear kinetic Fokker–Planck equation, together with the Poisson equation, for the model of blocked electrodes are built in an infinite approximation (including all orders k of smallness without dimensional parameters) of perturbation theory for an arbitrary order r of the frequency harmonic of an alternating external polarizing field. It has been established that the polarization nonlinearities in ion-molecular dielectrics, already detected at the fundamental frequency, are interpreted in the mathematical model (for the first time in this work) as interactions of the relaxation modes of the volume charge density calculated on different orders of spatial Fourier harmonics. At the fundamental frequency of the field, an analytical generalized expression is written for complex dielectric permittivity (CDP), which is expressed analytically in terms of special relaxation parameters, which are quite complex real functions in the fields of frequency and temperature. The theoretical CDP and the dielectric loss tangent spectra studied depend on the nature of the relaxation processes in the selected temperature range (Maxwell and diffusion relaxation; thermally activated and tunneling relaxation), which is relevant from the point of view of choosing exact calculation formulas when analyzing the optimal operating modes of functional elements (based on dielectrics and their composites) for circuits of instrumentation, radio engineering and power equipment in real industrial production.

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“…It is shown that the addition of a graphene layer to the PVDF ferroelectric polymer increases the coercivity field of the composite structure and shortens the polarization switching time of the composite structure. [118] Graphene [6,101] or multi-walled carbon nanotubes (MWCNTs) [102] were added into PVDF as nucleating agents to generate the -phase. By adding more fillers, it has been demonstrated that this technique is easy to use and effective for promoting the crystallization of the 𝛽-phase.…”

Section: Carbon-doped Pvdf Flexible Piezoelectric Haptic Sensormentioning

confidence: 99%

Section: Pvdf Flexible Piezoelectric Tactile Sensors Doped With Funct...mentioning

confidence: 99%

PVDF‐Based Flexible Piezoelectric Tactile Sensors: Review

Qi,

Xu,

et al. 2023

Cryst. Res. Technol.

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With the advent of the intelligence era, flexible piezoelectric tactile sensors are the key components for sensing information and sending signals. The performance parameters of piezoelectric sensors are closely related to the selection of piezoelectric materials. Compared with conventional piezoelectric materials, polyvinylidene fluoride (PVDF) has significant advantages in flexibility, stretchability, chemical stability, electromechanical conversion, ease of use, and acoustic propagation impedance. As a result, PVDF has become a popular topic of research. This paper introduces the working principle of piezoelectric materials and flexible piezoelectric sensors based on PVDF materials and details the research progress of different materials based on PVDF for the preparation of flexible piezoelectric tactile sensors, such as: PVDF and its copolymers for the preparation of flexible piezoelectric sensors and PVDF doped with other functional materials for the preparation of flexible piezoelectric sensors. In this paper, the advantages and disadvantages of different materials and the development prospects of PVDF flexible piezoelectric sensors are summarized to provide some insights for high‐performance flexible PVDF piezoelectric sensors.

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Polarization switching in nanoscale ferroelectric composites containing PVDF polymer film and graphene layers

Cited by 7 publications

References 31 publications

Influence of Quantum Effects on Dielectric Relaxation in Functional Electrical and Electric Energy Elements Based on Proton Semiconductors and Dielectrics

Influence of Quantum Effects on Dielectric Relaxation in Functional Electrical and Electric Energy Elements Based on Proton Semiconductors and Dielectrics

Theoretical Studies of Nonlinear Relaxation Electrophysical Phenomena in Dielectrics with Ionic–Molecular Chemical Bonds in a Wide Range of Fields and Temperatures

PVDF‐Based Flexible Piezoelectric Tactile Sensors: Review

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