Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions

Segatto, M.; Massarotto, Marco; Lancaster, Suzanne; T., Duong, Quang; Affanni, Antonio; Fontanini, Riccardo; Driussi, F.; Lizzit, Daniel; Mikolajick, Thomas; Slesazeck, Stefan; Esseni, D.

doi:10.1109/essderc55479.2022.9947185

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2023

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“…where c n and e n are the capture and emission rates, respectively [3], [10], [14], while N T (E T ) is the interface trap density at the trap energy E T .…”

Section: Simulation Frameworkmentioning

confidence: 99%

Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

Massarotto

Segatto

Driussi

et al. 2023

2023 35th International Conference on Microelectronic Test Structure (ICMTS)

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Ferroelectric Tunnel Junctions (FTJs) operating as memristors are promising electron devices to realize artificial synapses for neuromorphic computing. But the understanding of their operation requires an indepth electrical characterization. In this work, an in-house experimental setup is employed along with novel experimental methodologies to investigate the large-signal (LS) and small-signal (AC) responses of FTJs.For the first time, our experiments and physics-based simulations help to explain the discrepancies between LS and AC experiments reported in previous literature.

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“…where c n and e n are the capture and emission rates, respectively [3], [10], [14], while N T (E T ) is the interface trap density at the trap energy E T .…”

Section: Simulation Frameworkmentioning

confidence: 99%