Polarization-sensitive UVA photodetector based on heterojunction of ITO and rare-earth doped bismuth ferrite ceramics

Ultrahigh-performance self-powered photodetectors based on hexagonal YbMnO3 ferroelectric thin films by the polarization-induced ripple effect

“…Based on the holistic photo-detection performances, the YbMnO 3 (1040) photodetector is superior to other ferroelectric photodetectors. 20,[34][35][36][37][38][39][40][41][42][43][44][45][46][47] Therefore, the YbMnO 3 (1040) photodetector exhibits great potential as a high-efficiency selfpowered photo-detection material.…”

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

“…Ultraviolet-A (UVA) photodetectors (PDs) have attracted wide attention in both civilian and military applications, such as flame detection, ultraviolet cameras, and missile early warning systems [1][2][3][4][5][6][7][8][9]. Indium compounds such as In 2 Se 3 , In 2 S 3 and In 2 O 3 are widely reported for efficient photoelectric detection [10][11][12][13][14][15][16][17][18].…”

Achieving high microscale photoconductivity in Gd-modified bismuth ferrite via modulating ferroelectric polarization

“…Suitable chemical dopants have been explored to elevate the photovoltaic and photosensing performance in BFO-based materials. [16][17][18][19][20][21][22][23][24] The fundamental processes governing the magnitude of the photocurrent include the excitation of electron-hole pairs via the absorption of incident photons, the movement of photogenerated carriers across the material under the influence of an E field, and the recombination of electrons and holes. 25 Most photodetection studies are conducted at the macroscopic scale, typically with the three-dimensional (3D) heterostructure design wherein the ferroelectric material was sandwiched between top and bottom electrodes.…”

“…25 Most photodetection studies are conducted at the macroscopic scale, typically with the three-dimensional (3D) heterostructure design wherein the ferroelectric material was sandwiched between top and bottom electrodes. 17,19,22,[26][27][28][29] Macroscopic photoconductivity studies are often strongly influenced by the device architecture, thus limiting the unambiguous characterization of the ferroelectric charge transport properties. For instance, in the ITO/rare-earth-doped BFO/Au heterostructures, the photocurrent is affected by the built-in E fields arising from the p-n junction and Schottky barrier at the interfaces.…”

“…Suitable chemical dopants have been explored to elevate the photovoltaic and photosensing performance in BFO-based materials. 16–24 The fundamental processes governing the magnitude of the photocurrent include the excitation of electron–hole pairs via the absorption of incident photons, the movement of photogenerated carriers across the material under the influence of an E field, and the recombination of electrons and holes. 25…”