Polarization‐Sensitive Photodetector Based on High Crystallinity Quasi‐1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

Abstract

Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next‐generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large‐scale quasi‐1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi‐1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi‐1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi‐1D BiSeI nanowire‐based photodetector demonstrates a broadband photoresponse (400–800 nm) with high responsivity of 5880 mA W−1, fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais‐1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.

Polarization‐Sensitive Photodetector Based on Quasi‐1D (TaSe4)2I Nanowire Response to 10.6 µm

“…However, the crystal structure caused the polarization dichroic ratios to be small. The 1D van der Waals (vdW) materials, with a higher crystal structure anisotropic, have been explored to be polarization-sensitive photodetectors such as BiSeI nanowire, [21] ZrS 3 nanoribbon, [22,23] Sb 2 S 3 nanowire, [24] TiS 3 , [25] ZnO nanowires, [26] MnTe nanoribbon. [27] Besides the polarization-sensitive photodetection, 1D vdW materials possess unique properties such as strong light-matter interactions and easy integration with other materials.…”

van der Waals Stacking-Determined Polymorphs of Quasi-One-Dimensional BiSCl Grown by Chemical Vapor Deposition

“…Quasi-one-dimensional (quasi-1D) materials have garnered significant attention in recent years as a result of their unique physical properties. − Group V chalcohalides are a class of ternary quasi-1D materials with the chemical formula ABX (where A represents Bi or Sb, B represents S, Se, or Te, and X represents Cl, Br, or I), which exhibit diverse physical and chemical properties determined by their elemental composition. − Among these materials, bismuth chalcohalides have exhibited remarkable optoelectronic characteristics in theoretical and experimental studies, notably their band gap, light absorption, carrier mobility, and ionic dielectric constant. ,− These outstanding properties render them highly promising for a variety of applications, including photovoltaics, − photodetectors, − thermoelectric devices, − photocatalysis, − ferroelectricity, , piezoelectricity, , and even encompassing topological and superconducting properties , in certain instances.…”