Polarization-sensitive near-infrared photodetectors based on quasi-one-dimensional Sb2Se3 nanotubes

Raman Investigation, Second Harmonic Generation, and Ultrasensitive Photoresponse of Low Symmetry Transition Metal Halide PdBr2

“…Furthermore, the development of low-symmetry vdW materials, such as black phosphorus, , ReSe 2 , , GeP, and ZrGeTe 4 , , has emerged as a prominent research area in recent years. These low-symmetry materials with the anisotropic crystal structures exhibit unique optical and optoelectrical properties and have the potential for polarized optical absorption and photodetection. − Due to the demand for miniaturization and integration in the microelectronics industry, a multitude of low-dimensional and low-symmetric materials have been investigated. Transition metal halides (TMHs) , are particularly appealing among them.…”

Realization of High‐Performance Photoresponsivity of Sb2Se3‐Based Phototransistors by Using Hybrid Structure and Optimizing Annealing Temperature

“…[ 45 ] The responsivity and detectivity of ZSPT‐200 are compared with those of Sb 2 Se 3 ‐based photodetectors previously reported by other groups as shown in Figure 7c. [ 46–54 ] It is worth noting that our ZSPT‐200 exhibits the highest responsivity and relatively high detectivity compared to other Sb 2 Se 3 ‐based devices.…”

Ultrafast and broadband photodetection based on selenized AgSbS2 thin films prepared by spray pyrolysis deposition and modified with indium nitrate

“…15,16 Thin lm PDs based on binary metal chalcogenides, such as In 2 Se 3 , SnSe 2 , Sb 2 Se 3 , and CdSe, [17][18][19][20][21] have shown weak response in the long-wave infrared range, with most research focused on the visible to short-wave infrared region (<1100 nm). 22 Consequently, achieving high response speed and high responsivity photodetection in the long-wave infrared range remains a persistent challenge.…”