Abstract:A new mechanism for polarization rotation in rib waveguides is suggested and demonstrated in InP waveguides. The polarization rotation is achieved by loading a rib waveguide in a periodic asymmetric way. Complete TE↔TM conversion, with only 2–3 dB excess loss, is obtained in a 3.7-mm-long InP loaded waveguide. Strong polarization rotation (80%), in shorter devices (0.3 mm long), is also demonstrated.
“…Several structures of longitudinally variable passive polarization rotators have been reported in literature including: periodic asymmetric loaded rib waveguide (Shani et al, 1991), periodic tilted waveguiding section (Heidrich et al, 1992), periodically loaded strip waveguide (Mertens et al, 1998), cascaded bend waveguides (Van Dam et al, 1996;Liu et al, 1997Liu et al, , 1998aLiu et al, , 1998b) and a mode-evolution-based polarization rotator structure (Watts et al, 2005).…”
Section: An Overview On Passive Polarization Rotatorsmentioning
confidence: 99%
“…According to Fig. 1(b), the transverse component of the normal modes of for example the asymmetric loaded rib waveguide (Shani et al, 1991) …”
Section: An Overview On Passive Polarization Rotatorsmentioning
“…Several structures of longitudinally variable passive polarization rotators have been reported in literature including: periodic asymmetric loaded rib waveguide (Shani et al, 1991), periodic tilted waveguiding section (Heidrich et al, 1992), periodically loaded strip waveguide (Mertens et al, 1998), cascaded bend waveguides (Van Dam et al, 1996;Liu et al, 1997Liu et al, , 1998aLiu et al, , 1998b) and a mode-evolution-based polarization rotator structure (Watts et al, 2005).…”
Section: An Overview On Passive Polarization Rotatorsmentioning
confidence: 99%
“…According to Fig. 1(b), the transverse component of the normal modes of for example the asymmetric loaded rib waveguide (Shani et al, 1991) …”
Section: An Overview On Passive Polarization Rotatorsmentioning
“…In [139,140], the structure with periodical sections of asymmetrical load is used to realize a PR which is quite long (~3 mm) and has a large excess loss due to the scattering as well as the mode-mismatching at the junctions between alternating sections. Similarly cascaded bent sections have also been used [141,142] the PR length is as short as ~60 μm with the assistance of slant waveguide sidewalls [141].…”
An effective solution to enhance the capacity of an optical-interconnect link is utilizing advanced multiplexing technologies, like wavelength-division-multiplexing (WDM), polarization-division multiplexing (PDM), spatial-division multiplexing (SDM), bi-directional multiplexing, etc. On-chip (de)multiplexers are necessary as key components for realizing these multiplexing systems and they are desired to have small footprints due to the limited physical space for on-chip optical interconnects. As silicon photonics has provided a very attractive platform to build ultrasmall photonic integrated devices with CMOS-compatible processes, in this paper we focus on the discussion of silicon-based (de)multiplexers, including WDM filters, PDM devices, and SDM devices. The demand of devices to realize a hybrid multiplexing technology (combining WDM, PDM and SDM) as well as a bidirectional multiplexing technologies are also discussed to achieve Peta-bit optical interconnects.
“…Various types of PCs have been demonstrated to date; those based on periodic loaded waveguides [5], microbended waveguides [6], adiabatic waveguides [7]- [10], and asymmetric waveguides [11]- [19]. The asymmetric PCs are suitable for monolithic integration with InP photonic devices as well as their short operating length and relatively small sensitivity against the deviation of the wavelength and the temperature.…”
SUMMARY Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90% is achieved with the broad range of the waveguide width from 705 to 915 nm, corresponding to a factor-of-two or larger improvement in the fabrication tolerance compared with that of the conventional polarization converters. Finally we present a simple fabrication procedure of this newly proposed structure, where the thickness of the residual InGaAsP layer is controlled precisely by using a thin etch-stop layer.
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