Polarization-Resolved Imaging for Both Photoelastic and Photoluminescence Characterization of Photovoltaic Silicon Wafers

Lin, Tung-Wei; Rowe, L. P.; Kaczkowski, Alexander J.; Horn, Gavin P.; Johnson, Harley T.

doi:10.1007/s11340-016-0177-7

Cited by 5 publications

(4 citation statements)

References 38 publications

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“…Chen et al [32] used DOP measurements in A c c e p t e d m a n u s c r i p t their investigations of ZnO. Lin et al [33] and Peloso et al [34] applied polarization resolved photoluminescence to the characterization of photovoltaic silicon wafers. Winterfeldt et al [35] used degree of polarization measurements to aid in the investigation of the factors limiting the lateral beam parameter of 9xx nm high-power broad-area lasers.…”

Section: Introductionmentioning

confidence: 99%

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Cassidy

Landesman

2020

Appl. Opt.

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Experimentally it is known that the degree of polarization (DOP) of luminescence is a sensitive function of strain in III-V materials. It has been assumed that DOP = −K e (e 1 − e 2) and that the rotated degree of polarization (ROP) = 2 K e e 6 , where K e is a positive calibration constant, e 1 and e 2 are the normal components of strain along perpendicular '1' and '2' directions, and e 6 = e 12 is the tensor shear strain. K e has been measured experimentally for GaAs and InP. In this paper, the results of a simple analytic determination of expressions for DOP as a function of strain are presented. Given the wide ranges reported for the strain deformation potentials b and d, it is not possible to give definitive and meaningful numerical values for expressions for DOP and K e. However, the sensitivity of DOP to strain suggests that it might be possible to design simple experiments to provide accurate values for the deformation potentials. The b and d deformation potentials might not be independent. For the results presented here and in the limit of isotropic material, an isotropic result for the DOP is found if d = √ 3 b.

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Section: Introductionmentioning

confidence: 99%

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Cassidy

Landesman

2020

Appl. Opt.

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“…In 2011, Matthew P. Peloso observed that some material structures of silicon solar cells produce strong polarization characteristics, and found the polarization characteristics are related to the anisotropy of the internal charge of defects in silicon solar cells during the optical recombination process, especially for high dislocation density areas, where the partial polarization characteristic of the sub-band gap electroluminescence was highlighted; additionally, the polarization direction is consistent with the dislocation direction [9,10]. In 2013, Radek Stojan found that the relationship between the electroluminescence intensity of solar cells and the rotation angle of the linear polarization analyzer is sinusoidal through experiments and 3D data analysis, indicating that the electroluminescence of solar cells has polarization characteristics which are related to the internal structural and defect of photovoltaic cells [11,12]. The above research shows that the electroluminescence of solar cells has polarization characteristics, but it does not tell us which external objective factors are related to the polarization characteristics of electroluminescence, and it only aims at the research object of polysilicon solar cells, which have limitations.…”

Section: Introductionmentioning

confidence: 86%

Electroluminescence as a Tool to Study the Polarization Characteristics and Generation Mechanism in Silicon PV Panels

Zhang

Wang

et al. 2023

Applied Sciences

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Electroluminescence is a defect detection method commonly used in photovoltaic industry. However, the current research mainly focuses on qualitative analysis rather quantitative evaluation, since there exists some shortcomings, such as fuzzy edges, unclear texture, etc., in the obtained electroluminescence images. Electroluminescence polarization imagery is a new method for defect detection in photovoltaic modules, which can effectively make up for the aforementioned deficiencies. In this paper, the polarization characteristics and formation mechanism of silicon solar panels was investigated based on the principle of electroluminescence. Firstly, the polarization imaging mechanism of electroluminescence of photovoltaic modules was studied. Then, an electroluminescence polarization experimental platform was built, and the polarized electroluminescence images of photovoltaic panels were obtained and preprocessed with Gaussian filter. Finally, the influence of view angle, bias voltage and other factors on the polarization characteristics was discussed. The results show that the electroluminescence of photovoltaic modules has polarization characteristics, and the degree and angle of polarization are related to the view angle and bias voltage; the degree of polarization of photovoltaic panel electroluminescence increases with the angle of view, and first increases then rapidly decreases with bias voltage.

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“…We have recently developed a multi-modal infrared inspection system for imaging silicon PV wafers [16]. The system uses a broadband InGaAs IR camera, which, in addition to generating standard IR transmission images, can be used for IR photoelastic inspection, and both band-to-band and defect-band PL imaging with polarization resolution.…”

Section: Methodsmentioning

confidence: 99%

“…(e) Defect-band PL emission, at a slightly longer wavelength, obtained by applying a long pass filter to the signal from (c). The PL images and the imaging method are presented in greater detail in [16].…”

Section: Introductionmentioning

confidence: 99%

Polarized light emission from grain boundaries in photovoltaic silicon

Lin

Rowe

Kaczkowski

et al. 2016

Extreme Mechanics Letters

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Some crystalline defects in photovoltaic silicon have deleterious effects on the energy conversion efficiency of the material. Distinguishing the harmful defects from the benign defects is a critical problem in the mechanics of materials for solar energy conversion. Interestingly, the visible light absorbed by silicon in the same part of the solar spectrum that is used to generate photocurrent, can also excite photoluminescence, which may be used to generate images of the microstructure. Slightly longer wavelengths in the near infrared (IR) may be used to measure strain in the material via photoelastic (PE) imaging. These two imaging modalities have recently been combined in a single instrument, and we show here the additional capability to identify and categorize defects directly by capturing the narrow band of photoluminescence emitted by regions of high dislocation density. We use this method to show that dislocations arranged in low angle grain boundaries emit polarized light, while dislocation structures in neighboring high angle grain boundaries do not emit polarized light. This capability may form the basis for nextgeneration, full-field optomechanics-based characterization of materials for solar energy conversion.

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Polarization-Resolved Imaging for Both Photoelastic and Photoluminescence Characterization of Photovoltaic Silicon Wafers

Cited by 5 publications

References 38 publications

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Electroluminescence as a Tool to Study the Polarization Characteristics and Generation Mechanism in Silicon PV Panels

Polarized light emission from grain boundaries in photovoltaic silicon

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