Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation

Dai, Ying; Guo, Wei; Chen, Li; Xu, Houqiang; AlQatari, Feras; Guo, Chenyu; Peng, Xianchun; Tang, Kailin; Liao, Che‐Hao; Li, Xiaohang; Ye, Jichun

doi:10.1063/5.0097037

Cited by 8 publications

(4 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Detailed device fabrication and structure characterization have been reported elsewhere. [ 24 ] KOH wet etching was used to verify the polarity of III‐polar and N‐polar regions in the sample, and the atomic force microscope image is shown in Figure 5c. It is illustrated that N‐polar domains are susceptible to KOH etching, while the III‐polar domain remains intact.…”

Section: Resultsmentioning

confidence: 99%

“…[18][19][20][21][22][23] In previous work of our group, polarization-induced isolation in AlGaN/GaN HEMT with AlN buffer based on LPS platform, featuring an ultrahigh isolation breakdown voltage of 2628 V in LPS platform was demonstrated, and a low off-state leakage current of 2 Â 10 À8 mA mm À1 and high I on /I off ratio of 10 9 were also revealed. [24] However, the significance of GaN or AlGaN buffer layer on the performance of AlGaN/GaN HEMT still needs to be further investigated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure

Dai

Zhao

Luo

et al. 2023

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

Herein, polarization‐induced self‐isolation free from process damages in AlGaN/GaN high‐electron‐mobility transistor (HEMT) by the incorporation of lateral‐polarity structure (LPS) is demonstrated. The incorporation of LPS into the AlGaN/GaN heterojunction shows that 2D electron gas (2DEG) is formed in the III‐polar heterojunction but depleted in the N‐polar counterpart. A large lateral barrier height of 3.5 eV between the III‐polar and N‐polar domain boundary is revealed and buffer leakage is proved to be responsible for the weakened isolation characteristics. To suppress the buffer leakage, the influence of the AlGaN buffer on the leakage current is comprehensively investigated. Compared to pure GaN film and AlGaN/GaN heterojunction, two‐terminal isolation leakage current in AlGaN/GaN/Al0.2Ga0.8N heterojunction is greatly reduced by about nine orders of magnitude to as low as 10−11 A as experimentally confirmed. The incorporation of LPS into AlGaN/GaN heterojunction provides a novel planar isolation technique with excellent device performance by eliminating the isolation leakage path.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure

Dai

Zhao

Luo

et al. 2023

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

show abstract

“…Today, ion implantation for device isolation remains an important process for commercialising GaN device technology. Besides, a method using polarization isolation has been proposed to effectively reduce the leakage current and improve the breakdown performance of the device, it is a promising alternative toward the plasmadamage-free isolation for GaN HEMTs [227].…”

Section: Device Isolationmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

show abstract

“…Due to the non-centrosymmetric crystal structure of wurtzite III-nitride, distinguishable gallium and nitrogen polarities with opposite, spontaneous, and piezoelectric polarizations have been revealed along the c-axis of GaN thin films [11,12]. In the pursuit of high-performance GaN electronic devices over the past decade, Ga-polar thin films have been widely utilized as a mature growth technology with a smoother surface morphology and better crystalline quality.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Yu,

Dai,

Tang

et al. 2024

Electronics

Self Cite

View full text Add to dashboard Cite

We conducted a comparative study on the characterization of Ga-polar and N-polar GaN metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The correlation between the surface morphology and the current–voltage (I–V) characteristics of the Ga- and N-polar GaN Schottky contact with and without SiNx was established. The insertion of SiNx helps in reducing the reverse leakage current for both structures, even though the leakage is still higher for N-polar GaN, consistent with the Schottky barrier height calculated using X-ray photoelectron spectroscopy. To optimize the electric property of the N-polar device, various substrate misorientation angles were adopted. Among the different misorientation angles of the sapphire substrate, the GaN MIS Schottky barrier diode grown on 1° sapphire shows the lowest reverse leakage current, the smoothest surface morphology, and the best crystalline quality compared to N-polar GaN grown on 0.2° and 2° sapphire substrates. Furthermore, the mechanism of the reverse leakage current of the MIS-type N-polar GaN Schottky contact was investigated by temperature-dependent I–V characterization. FP emissions are thought to be the dominant reverse conduction mechanism for the N-polar GaN MIS diode. This work provides a promising approach towards the optimization of N-polar electronic devices with low levels of leakage and a favorable ideality factor.

show abstract

Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation

Cited by 8 publications

References 49 publications

Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure

Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Contact Info

Product

Resources

About