Polarization-enhanced photoelectric performance in a molecular ferroelectric hexane-1,6-diammonium pentaiodobismuth (HDA-BiI₅)-based solar device

Abstract

Molecular ferroelectric HDA-BiI5 has been utilized as the light-absorbing layer for organic-inorganic hybrid solar cells.

Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor

“…This suggests that photoionization will be further enhanced with one carrier being trapped and another carrier flowing in a circular fashion, which reduces the large recombination of electron-hole pairs, enhancing photodetector performance [25]. The performance of this device is attractive compared to other similar detectors, and a comparison chart of the performance parameters with other similar devices is presented in Table 1 [20,21,[26][27][28][29][30][31][32][33]. According to previous literature reports, the HDA-BiI 5 -based device study did not systematically analyze the relevant parameter performance of the detector [20,21], however, compared with detectors of other materials, although some devices exhibit lower dark currents, our device is still very competitive as a photodetector without electron transport layer structure, considering the overall photoelectronic performance and simple fabrication process.…”

“…Then, we prepared the HDA-BiI 5 film on NiO x hole transport layer, and it can be seen in Figure 1 that the film surface is flat, however, there are a few cracks and holes. Furthermore, the film thickness reaches 1 µm, and the thickness is also a key factor affecting device performance, an appropriately thick light-absorbing layer can improve the photovoltaic performance, which can be attributed to the increased light absorption and light collection efficiency [21][22][23]. In addition, it is known from previous studies that HDA-BiI 5 is an N-type material [20].…”

“…The performance of this device is attractive compared to other similar detectors, and a comparison chart of the performance parameters with other similar devices is presented in Table 1 [20,21,[26][27][28][29][30][31][32][33]. According to previous literature reports, the HDA-BiI 5 -based device study did not systematically analyze the relevant parameter performance of the detector [20,21], however, compared with detectors of other materials, although some devices exhibit lower dark currents, our device is still very competitive as a photodetector without electron transport layer structure, considering the overall photoelectronic performance and simple fabrication process. To further investigate the effect of wavelengths of laser on the photoelectric performance of the detector, we use 532 nm wavelength laser for the photoelectric performance test.…”

“…However, the effect on the performance was not further investigated by changing the device structure, we made photodetectors without electron transport layer to study. In addition, Liu et al used the molecular semiconductor material HDA-BiI 5 to prepare conventional structured solar devices and tested the relevant photovoltaic performance under solar light conditions [21]. It is not enough to characterize performance only under solar light conditions.…”

Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer

“…Liu et al fabricated conventional photodetectors using this material, and the photocurrent density of the device was 17.5 µA/cm 2 . After polarization, the photocurrent generated by the ferroelectric photovoltaic device was significantly increased, reaching the maximum of 92.4 µA/cm 2 [9]. In David M's work, the device exhibited a short-circuit photocurrent density (JSC) of 0.124 mA/cm 2 , an open-circuit photovoltage of 403 mV, a fill factor of 0.43, and an photoelectric conversion efficiency of 0.027% [10].…”