2020
DOI: 10.1016/j.matchemphys.2020.123279
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Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers

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Cited by 2 publications
(2 citation statements)
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“…However, our method can be applied to a structure of arbitrary number of layers, one of which could be a substrate. Theoretical details used here to calculate the reflectivity/transmission spectra at oblique-incidence for BeTe, ZnTe and BexZn1-xTe epifilms on GaAs substrate are reported elsewhere [20].…”
Section: Numerical Simulations Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…However, our method can be applied to a structure of arbitrary number of layers, one of which could be a substrate. Theoretical details used here to calculate the reflectivity/transmission spectra at oblique-incidence for BeTe, ZnTe and BexZn1-xTe epifilms on GaAs substrate are reported elsewhere [20].…”
Section: Numerical Simulations Results and Discussionmentioning
confidence: 99%
“…Sec. 3) and using a multilayer optics methodology [19][20] we have systematically performed calculations of the s-and ppolarized reflectance [Rs,p()] and transmission [Ts,p()] spectra at oblique incidence (i) by considering apposite Fresnel coefficients. The results of binary BeTe (ZnTe)/GaAs (001) and ternary alloy Be0.5Zn0.5Te/GaAs (001) epifilms as well as BeTe/ZnTe/GaAs (001) SLs (cf.…”
Section: Introductionmentioning
confidence: 99%