Polarization dependence of non-linear gain compression factor in semiconductor optical amplifier

Philippe, Severine; Bradley, A. Louise; Maldonado-Basilio, Ramón; Surre, F.; Kennedy, Brendan F.; Landais, Pascal; Soto-Ortiz, H.

doi:10.1364/oe.16.008641

Cited by 7 publications

(2 citation statements)

References 49 publications

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“…However, the total gain compression is higher in the TMTM case, meaning that a smaller proportion of carrier density has recovered by carrier cooling than in the TETE case. These experimental results have been successfully modeled by numerical simulation based on the carrier density rate equation and taking into account the polarization dependence of the intraband gain compression [15].…”

Section: B Polarization Dependent Dynamicsmentioning

confidence: 99%

Experimental Investigation of Polarization Effects in Semiconductor Optical Amplifiers and Implications for All-Optical Switching

Philippe

Bradley

Kennedy

et al. 2008

J. Lightwave Technol.

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Abstract-A free-space contra-propagation configuration is implemented and pump-probe studies are undertaken in order to study polarization-dependent gain dynamics in bulk semiconductor optical amplifiers (SOAs) and their application to gain and polarization switching. The polarization dependence of the gain compression shows that the co-polarized case, in which the pump and probe are TE-polarized, is the optimum for gain switching. When injecting light polarized at 45 , an additional contribution due to the presence of rotating fields is observed, and the cross-polarized case is found to be the most promising for polarization switching. The potential for all-optical switching based on nonlinear polarization rotation (NLPR) induced in the SOA is then assessed through characterization of the dynamics of the state of polarization. It is demonstrated that by careful selection of the orientation of a linear polarizer in front of the detector, it is possible to reduce the recovery time from 100 to 5 ps. The improvement comes about from the selection of the intraband fast gain recovery dynamics. Polarization switching offers potentially faster switching times compared to gain switching as well as an extinction ratio improvement of 10 dB.

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Section: B Polarization Dependent Dynamicsmentioning

confidence: 99%

Experimental Investigation of Polarization Effects in Semiconductor Optical Amplifiers and Implications for All-Optical Switching

Philippe

Bradley

Kennedy

et al. 2008

J. Lightwave Technol.

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“…Besides acting as an amplifier, its inherent non-linearities allow it to be the basis of many all-optical signal processing functions, usually based on polarisation rotation or gain compression [1,2], such as wavelength converters and logic gates. Compared to Erbium doped fibre amplifier (EDFA), Erbium doped waveguide amplifier (EDWA) or Raman amplifier, SOA has many advantages: lower cost, larger bandwidth, smaller size, potential to be integrated on a chip and electrical pumping.…”

Section: Introductionmentioning

confidence: 99%

Novel design for noise controlled semiconductor optical amplifier

Philippe

Surre

Carney

et al. 2009

2009 11th International Conference on Transparent Optical Networks

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The use of semiconductor optical amplifiers (SOA) in optical communications networks has so far been limited due to their inherent large noise figure (NF) compared to Erbium Doped Fibre Amplifiers. Therefore improvement of the noise performance of SOAs is critical to their widespread adoption in future networks. We propose to reduce the NF of the SOA by introducing a lasing cavity lateral to the axis of amplification of the device. The carrier density within the cavity is clamped at the lasing threshold. It is thus possible to engineer the carrier density distribution along the active waveguide by controlling the cavity design. According to our simulations, some of the cavity designs lead to a reduction of the noise figure in this novel SOA.

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All‐Optical Wavelength Conversion

Lazarou

Avramopoulos

2016

Wiley Encyclopedia of Electrical and Electronics Engineering

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This article overviews the fundamental principles and attributes of the major all‐optical signal wavelength conversion (AOWC) methods commonly found in the literature over the last 25 years from the system perspective, which are oriented mainly for telecommunications applications. Two principal AOWC categories are analyzed: first, the optically controlled gates based on semiconductor optical amplifiers (SOAs) or electroabsorption modulators (EAMs) and second, the wave‐mixing AOWC schemes exploiting χ (3) or χ (2) material nonlinearities. In the case of the SOA‐based gates, the effects of cross gain modulation (XGM) and cross phase modulation (XPM) – with or without the employment of the offset filtering technique – are explained and a brief description of the regenerative schemes with SOA‐MZI (Mach‐Zehnder interferometer) switches is attempted. For the case of EAM‐based gates, both XAM and XPM effects are mentioned, utilized for efficient AOWC of intensity‐modulated signals. The wave‐mixing methods, covered in Section 2 of the article, start with the four wave mixing (FWM) effect on χ (3) materials, describing methods to implement polarization insensitive operation. Special attention on the AOWC of advanced modulation formats is attempted by explaining methods on minimizing the phase noise induced on the conversion process. For AOWC on χ (2) , materials the fundamental effects of difference frequency generation (DFG), sum frequency generation (SFG), and sum harmonic generation (SHG) are explained. In addition, particular focus is put on the attributes and the wavelength mapping of the cascaded cSFG/DFG and cSHG/DFG processes utilized in most AOWC‐schemes based on χ (2) nonlinearities.

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Polarization dependence of non-linear gain compression factor in semiconductor optical amplifier

Cited by 7 publications

References 49 publications

Experimental Investigation of Polarization Effects in Semiconductor Optical Amplifiers and Implications for All-Optical Switching

Experimental Investigation of Polarization Effects in Semiconductor Optical Amplifiers and Implications for All-Optical Switching

Novel design for noise controlled semiconductor optical amplifier

All‐Optical Wavelength Conversion

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