Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

“…PE-ALD grown AlN films on GaN typically exhibit a good epitaxial quality, giving rise to the formation of an interfacial 2DEG. However, the measured sheet electron density values are typically lower than in MBE-grown AlN with equivalent thickness and were found to depend on the deposition conditions [19] as well as on the deposited AlN thickness [21]. Moreover, significant oxygen incorporation is commonly observed in ALD grown AlN films, with the highest concentration at the film surface, probably due to exposure to the atmosphere after the deposition process [22][23][24].…”

Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition

“…Nitride materials by plasma-enhanced atomic layer deposition (PEALD) are of significant interest for a wide range of electronic applications including logic, power, and optoelectronic devices. [1][2][3][4][5] One of the challenges for obtaining high-quality nitrides by PEALD is the prevention of oxidation during growth. 6 This is especially true for nitrides of elements with a high affinity for oxygen such as titanium nitride where reported oxygen levels vary over an extended range.…”