Polarization characteristics of compact SOI rib waveguide racetrack resonators

Kiyat, Isa; Aydınlı, Atilla; Dagli, N.

doi:10.1109/lpt.2005.856410

Cited by 10 publications

(9 citation statements)

References 11 publications

(21 reference statements)

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“…The single-mode condition [11,12], the bending characteristic [13], and the birefringence [14][15][16][17][18][19][20] of large SOI ridge waveguides have been well investigated. Various passive elements have also been developed [21][22][23][24][25][26][27][28][29][30][31], e.g., the first arrayed-waveguide grating (AWG) demultiplexer demonstrated by Trinh et al in 1997 [31]. One of the advantages of large SOI ridge waveguides is that accurate phase control is easier than that for small SOI waveguides (e.g., SOI nanowires discussed below), leading to their continued use in commercial applications.…”

Section: Introductionmentioning

confidence: 99%

Polarization management for silicon photonic integrated circuits

Dai

Liu

Gao

et al. 2012

Laser & Photonics Reviews

292

148

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Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse‐electrical (TE) and transverse‐magnetic (TM) modes are generally different. Polarization‐dependent dispersion and polarization‐dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon‐on‐insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.

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Section: Introductionmentioning

confidence: 99%

Polarization management for silicon photonic integrated circuits

Dai

Liu

Gao

et al. 2012

Laser & Photonics Reviews

292

148

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“…Ring res-onators have been used as the building blocks in applications including add-drop, switching, modulation, and sensing [24][25][26][27]. However, polarization sensitivity is often an obstacle that limits their practical use [12,15,18]. The power transmission in the bus waveguide of a single coupler ring resonator (Figure 7(a)) can be obtained by a generalization of the ring resonator equations to incorporate the coupler loss [18,28]:…”

Section: Mmi-coupled Polarization-independent Ring Resonatorsmentioning

confidence: 99%

“…Primarily motivated by the potential of high-integration density and compatibility with mature CMOS technologies, siliconon-insulator (SOI) has been the main material platform for silicon photonic waveguide components [1,9]. Along with these benefits, control and utilization of polarizationdependent properties arise as a challenge, as well as open new possibilities in advanced designs and functionalities [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Stress Induced Effects for Advanced Polarization Control in Silicon Photonics Components

Janz

et al. 2008

Advances in Optical Technologies

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We review the use of the oxide cladding stress-induced photoelastic effect to modify the polarization dependent properties in silicon-on-insulator (SOI) waveguide components, and highlight characteristics particular to this high index contrast (HIC) systems. The birefringence in SOI waveguides has its origin in the electromagnetic boundary conditions at the waveguide boundaries, and can be further modified by the presence of stress in the waveguiding materials. With typical stress levels in SiO2 films, which are often used as the upper cladding, the waveguide effective index can be altered anisotropically up to the order of 10−3 for ridges with heights ranging from 1 μm to 5 μm. This effect can be used effectively to counter the waveguide geometrical birefringence, allowing the waveguide cross-section profiles to be optimized for design criteria other than null geometrical birefringence. Design strategies are developed for using stress engineering to achieve a variety of functions. Polarization insensitive arrayed waveguide gratings (AWGs), polarization insensitive ring resonators, and polarization splitters and filters are demonstrated using these design principles.

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“…High index contrast silicon-on-insulator is an ideal platform for implementing compact photonic devices, and many functions have been realized in recent years [4][5][6][7][8][9]. Ring resonators using sub-micrometer wire waveguides [10][11][12][13] and ridge waveguides with cross-sections larger than 1 µm 2 [14][15][16] have been demonstrated in the SOI platform. Ridge waveguides can be made single mode even with cross sections of several microns, giving better fiber to waveguide coupling [17].…”

Section: Introductionmentioning

confidence: 99%

“…Good overlap in the resonance frequencies and quality factors between TE and TM polarizations were demonstrated, but the FSR (0.19 nm) is limited and the fabrication requirements are stringent [21]. SOI ridge waveguide race track resonators are also investigated by another group with radii as small as 20 µm for achieving larger FSR, but these resonators showed strong polarization dependence [16]. Ring resonators utilizing a multi-mode-interference (MMI) coupler have been reported in several applications including ring lasers and optical amplifiers [22][23][24], and it has been analyzed for InP-based system as a design alternative for polarization independent operation [25].…”

Section: Introductionmentioning

confidence: 99%

Polarization-insensitive MMI-coupled ring resonators in silicon-on-insulator using cladding stress engineering

Cheben

Delâge

et al. 2007

SPIE Proceedings

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We review the design considerations and experimental results of a novel design of polarization insensitive ring resonators in silicon-on-insulator (SOI) ridge waveguides. The polarization insensitive coupling is achieved using a multi-mode-interference (MMI) coupler. Cladding stress-induced birefringence is used to correct the round trip phase difference between the TE and TM polarizations. Experimental demonstration is presented for such ring resonators fabricated on SOI with 1.5 µm Si waveguide core layer. For resonators with radius R = 200 µm, polarization insensitive operation is achieved in both the resonance wavelength and linewidth over a ~ 4 nm wavelength range using a 7.5 µm × 84 µm MMI coupler and 0.8 µm thick oxide cladding with -250 MPa stress, with the resonance wavelength shifts between TE and TM polarizations less than 3 pm. The quality factor Q of ~ 15,000 and free-spectral range (FSR) of 0.46 nm is measured. For resonators with a smaller radius of 50 µm, similar FRS of 1.3 nm and extinction of 13 dB are observed for TE and TM, although the resonance wavelengths are shifted, in agreement with the theoretical prediction. By choosing the proper combination of the cladding stress and thickness, zero-birefringence condition can be achieved for resonators of different cavity lengths.

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Polarization characteristics of compact SOI rib waveguide racetrack resonators

Cited by 10 publications

References 11 publications

Polarization management for silicon photonic integrated circuits

Polarization management for silicon photonic integrated circuits

Stress Induced Effects for Advanced Polarization Control in Silicon Photonics Components

Polarization-insensitive MMI-coupled ring resonators in silicon-on-insulator using cladding stress engineering

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