Polarization- and wavelength-insensitive guided-wave optical switch with semiconductor Y junction

Yanagawa, H.; Ueki, K.; Kamata, Yuichi

doi:10.1109/50.57840

Cited by 27 publications

(7 citation statements)

References 16 publications

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“…In the past 30 years, GaAs and InP-based compound semiconductor materials have played an important role in integrated optical devices [2] , especially in the development of high-speed optical switch [3] . Compound semiconductor based high optical switch mainly employ the electrooptic effect, and the carrier injection effect [4][5][6][7][8] . Because of the small electro-optic coefficient, switches based on electro-optic effect usually have large size or high driving voltage.…”

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confidence: 99%

Research of high speed optical switch based on compound semiconductor

Wang

Wei

et al. 2009

Chin. Sci. Bull.

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High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 μm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.optical switch, total internal reflection, multimode interference, carrier injection Optical fiber communication technology has become the backbone of modern communication network, and formed enormous applications. As a key component of optical fiber communication system, optical switch and its array have been the focus of research and development [1] . High-speed optical switch and its large-scale arrays are essential for optical network based on optical packet switching (OPS). By employing various physical effects and technology, many types of optical switch have been developed. Among them, apart from the most traditional mechanical optical switches, there are many commercial products, e.g. the micro electro mechanical system (MEMS) based switch, the silica or organic polymer based waveguide switch, and the liquid crystal based switch. They have good performances in extinction ratio, insertion loss, polarization dependence and integration. However, most of them have a low switching speed, a magnitude of milliseconds (ms) typically. OPS based network requires that the switching speed reaches a magnitude of nanoseconds (ns), thus the high-speed optical switch and its arrays are very attractive.Compound semiconductor materials are used widely for high-speed microelectronic integrated devices. Besides, they are important material for optoelectronic devices and high-speed optical waveguide devices. Compound semiconductor is a promising platform for the optical and electronic integrated circuits (OEIC). In the past 30 years, GaAs and InP-based compound semiconductor materials have played an important role in integrated optical devices [2] , especially in the development of high-speed optical switch [3] . Compound semiconductor based high optical switch mainly employ the electrooptic effect, and the carrier injection effect [4][5][6][7][8] . Because of the small electro-optic coefficient, switches based on electro-optic effect usually have large size or high driving voltage. On the other hand, similar to the electro-optic effect of LiNbO 3 , the electro-optic coefficient of compound semiconductor is polarization-dependent as well. In the communication wavelength range of 1.31-1.55 μm, the refractive index change induced by the carrier injection effect is about two orders of magnitude greater than that by the electro-optic effect, and it is very easy to obtain a refractive index change as large as

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confidence: 99%

Research of high speed optical switch based on compound semiconductor

Wang

Wei

et al. 2009

Chin. Sci. Bull.

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“…Most use an active device simulator [1,11,14] to generate the carrier density and then apply the Soref model and a mode solver to determine the phase shift as a function of bias of a particular waveguide section. Others include BPM simulations of the full topology [10,13], using several rigorously simulated cross-sections [13] and a simple surface topology. Alternatively, a simpler model for the transport and index profile may be used, along with a more complicated device topology [10].…”

Section: Simulation Methodologymentioning

confidence: 99%

“…Mach-Zehnder Interferometer (MZI) modulators fabricated in this material can provide commercially available bit rates of up to 40Gb/s [5]. Alternatively, MZI devices can also be fabricated in III-V semiconductor material systems, such as InP, GaAs, InGaAsP [6,7,8,9,10], which allow for the added benefit of monolithic integration with other types of devices, such as detectors, amplifiers, and lasers. More importantly, they can be fabricated in Si, or Silicon-on-Insulator (SOI) [1,4,11,12,13,14,15], which allow for the integration with detectors and silicon electronic circuits.…”

Section: Introductionmentioning

confidence: 99%

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Simulation of carrier dependent absorption effects in silicon optical waveguide devices (Invited Paper)

Heller¹,

Grote²,

Maki³

et al. 2005

SPIE Proceedings

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High-Speed silicon modulators, based on carrier dependent absorption effects, have recently been reported in the literature [1]. For improved performance, these modulators rely on a MOS configuration to control carrier accumulation, rather than on carrier injection from the contacts, to induce an index perturbation for controlling the phase of a propagating signal. Accurate simulation of the carrier distribution is required for the analysis of such a device. This entails the self-consistent solution of the coupled electro-thermal transport equations. An appropriate absorption model is also required in order to couple the carrier distribution to the propagating optical field, via a complex index perturbation. Finally, in order to determine performance, the full optical problem must be solved throughout the device domain.The present work integrates the Box Integral Method of solving the active device transport equations [2] with the Vector Beam Propagation Method (BPM) typically used to analyze passive waveguide structures [3]. A modified Drude Model and Kramers-Kronig relations [4] are used to determine the carrier density dependent absorption and refractive index perturbations. This complex index perturbation is determined as a function of the applied voltage, and used by a simulator based on the BPM to determine the optical performance of an example silicon modulator. Both steady-state and frequency responses are considered. This comprises a general methodology for analyzing realistic semiconductor photonic devices in which the optical propagation is affected by the electro-thermal transport within the device.

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“…Accordingly, efforts have been made to restrict current spreading and to confine the injected carriers to the desired region. Typically, achieving such carrier confinement involves using relatively complex semiconductor device technologies, such as ion implantation (Abdalla et al, 2004;Zhuang et al, 1996), electron-beam lithography (Shimomura et al, 1992), Zn diffusion (Yanagawa et al, 1990), and epitaxial regrowth (Thomson et al, 2008).…”

Section: Introductionmentioning

confidence: 99%