Polarization and Localization of Single-Photon Emitters in Hexagonal Boron Nitride Wrinkles

Yim, Donggyu; Yu, Mihyang; Noh, Gichang; Lee, Jieun; Seo, Hosung

doi:10.1021/acsami.0c09740

Cited by 47 publications

(42 citation statements)

References 67 publications

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“…As a result, UV single photon emission can be achieved at the point defects in 2D III‐nitride materials because of the wide band gap. [ 271–277 ] The single photon emission at the point defects in h‐BN has been confirmed experimentally. Bourrellier et al.…”

Section: Applications Of 2d Iii‐nitride Materialsmentioning

confidence: 87%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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2D III‐nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III‐nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin‐based devices, and gas detectors. Although the developments of 2D h‐BN materials have been successful, the fabrication of other 2D III‐nitride materials, such as 2D h‐AlN, h‐GaN, and h‐InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III‐nitride materials are summarized. The properties of the 2D III‐nitride materials are mainly obtained by first‐principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III‐nitride materials is focused on 2D h‐BN and h‐AlN, as the developments of 2D h‐GaN and h‐InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h‐BN materials; however, many potential applications are cited for the entire range of 2D III‐nitride materials. Finally, future research directions and prospects in this field are also discussed.

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Section: Applications Of 2d Iii‐nitride Materialsmentioning

confidence: 87%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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“…Although the zero phonon lines of different emitters may range over 570-800 nm [187,193], single photon emission from hBN defects can be spectrally tuned using strain [194][195][196], photodoping in ionic liquid devices [197] and temperature tuning methods [193]. Localization of emitters and some control over their polarization has been achieved using defects formed at wrinkles in hBN layers [198]. In order to exploit hBN centres in integrated devices, efficient extraction of single photons is required.…”

Section: Hexagonal Boron Nitride Defectsmentioning

confidence: 99%

Quantum nanophotonic and nanoplasmonic sensing: towards quantum optical bioscience laboratories on chip

Xavier

Jones

et al. 2021

Nanophotonics

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Quantum-enhanced sensing and metrology pave the way for promising routes to fulfil the present day fundamental and technological demands for integrated chips which surpass the classical functional and measurement limits. The most precise measurements of optical properties such as phase or intensity require quantum optical measurement schemes. These non-classical measurements exploit phenomena such as entanglement and squeezing of optical probe states. They are also subject to lower detection limits as compared to classical photodetection schemes. Biosensing with non-classical light sources of entangled photons or squeezed light holds the key for realizing quantum optical bioscience laboratories which could be integrated on chip. Single-molecule sensing with such non-classical sources of light would be a forerunner to attaining the smallest uncertainty and the highest information per photon number. This demands an integrated non-classical sensing approach which would combine the subtle non-deterministic measurement techniques of quantum optics with the device-level integration capabilities attained through nanophotonics as well as nanoplasmonics. In this back drop, we review the underlining principles in quantum sensing, the quantum optical probes and protocols as well as state-of-the-art building blocks in quantum optical sensing. We further explore the recent developments in quantum photonic/plasmonic sensing and imaging together with the potential of combining them with burgeoning field of coupled cavity integrated optoplasmonic biosensing platforms.

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“…For instance, several promising spin defects have been identified in silicon carbide, including the divacancy (VV) 8,9 , Cr [10][11][12] , and V impurities 13 . There is also a growing interest in discovering and designing spin qubits in piezo-electric materials such as aluminum nitride 14,15 , in oxides 16 , and in 2D materials 17,18 .…”

Section: Introductionmentioning

confidence: 99%

Spin–spin interactions in defects in solids from mixed all-electron and pseudopotential first-principles calculations

Ghosh

Onizhuk

et al. 2021

npj Comput Mater

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Understanding the quantum dynamics of spin defects and their coherence properties requires an accurate modeling of spin-spin interaction in solids and molecules, for example by using spin Hamiltonians with parameters obtained from first principles calculations. We present a real-space approach based on density functional theory for the calculation of spin-Hamiltonian parameters, where only selected atoms are treated at the all-electron level, while the rest of the system is described with the pseudopotential approximation. Our approach permits calculations for systems containing more than 1000 atoms, as demonstrated for defects in diamond and silicon carbide. We show that only a small number of atoms surrounding the defect needs to be treated at the all-electron level, in order to obtain an overall all-electron accuracy for hyperfine and zero-field splitting tensors. We also present results for coherence times, computed with the cluster correlation expansion method, highlighting the importance of accurate spin-Hamiltonian parameters for quantitative predictions of spin dynamics.

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Polarization and Localization of Single-Photon Emitters in Hexagonal Boron Nitride Wrinkles

Cited by 47 publications

References 67 publications

2D III‐Nitride Materials: Properties, Growth, and Applications

2D III‐Nitride Materials: Properties, Growth, and Applications

Quantum nanophotonic and nanoplasmonic sensing: towards quantum optical bioscience laboratories on chip

Spin–spin interactions in defects in solids from mixed all-electron and pseudopotential first-principles calculations

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