Polarization aberration analysis in optical lithography systems

Kye, Jongwook; McIntyre, Gregory; Yamamoto, Naokatsu; Levinson, Harry

doi:10.1117/12.656864

Cited by 26 publications

(11 citation statements)

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“…Polarized illumination leads to an increase in contrast for hyper-NA immersion lithography [3] . All the components within the optical path, including the mask, must be compatible with this resolution enhancement technique.…”

Section: Degree Of Polarizationmentioning

confidence: 99%

“…In turn mask material properties and manufacturing techniques impact our ability to meet the technology roadmap. Studies have shown the advantages of polarized light [2,3] as well as the impact of various mask materials on high NA lithography [4] . In this paper we select the recently introduced binary mask material made from a MoSi absorber called Opaque MoSi On Glass (OMOG) for comparison with the conventional 6% att.…”

Section: Introductionmentioning

confidence: 99%

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Front Matter: Volume 7488

Zurbrick¹,

Montgomery²

2009

SPIE Proceedings

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Terms of Use: https://www.spiedigitallibrary.org/terms-of-useThe papers included in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.Please use the following format to cite material from this book:Author ( Copying of material in this book for internal or personal use, or for the internal or personal use of specific clients, beyond the fair use provisions granted by the U.S. Copyright Law is authorized by SPIE subject to payment of copying fees. The Transactional Reporting Service base fee for this volume is $18.00 per article (or portion thereof), which should be paid directly to the Copyright Clearance Center (CCC), 222 Rosewood Drive, Danvers, MA 01923. Payment may also be made electronically through CCC Online at copyright.com. Other copying for republication, resale, advertising or promotion, or any form of systematic or multiple reproduction of any material in this book is prohibited except with permission in writing from the publisher. The CCC fee code is 0277-786X/09/$18.00.Printed in the United States of America.Publication of record for individual papers is online in the SPIE Digital Library. SPIEDigitalLibrary.orgPaper Numbering: Proceedings of SPIE follow an e-First publication model, with papers published first online and then in print and on CD-ROM. Papers are published as they are submitted and meet publication criteria. A unique, consistent, permanent citation identifier (CID) number is assigned to each article at the time of the first publication. Utilization of CIDs allows articles to be fully citable as soon they are published online, and connects the same identifier to all online, print, and electronic versions of the publication. SPIE uses a six-digit CID article numbering system in which:The first four digits correspond to the SPIE volume number. The last two digits indicate publication order within the volume using a Base 36 numbering system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B … 0Z, followed by 10-1Z, 20-2Z, etc. The CID number appears on each page of the manuscript. The complete citation is used on the first page, and an abbreviated version on subsequent pages. Numbers in the index correspond to the last two digits of the six-digit CID number. This year's conference broadened its venue by including four sessions on NanoImprint and Patterned Media Technology. The four sessions addressed the latest work performed in template manufacturing, inspection and repair as well as overviews of patterned magnetic data storage media manufacture and challenges. The data recording media ind...

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Section: Degree Of Polarizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Front Matter: Volume 7488

Zurbrick¹,

Montgomery²

2009

SPIE Proceedings

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“…To model these hyper-NA systems, current state-of-the-art OPC modeling engines are already capable of modeling thin-film energy coupling, vector diffraction, polarization illumination, and immersion, imaging. [1][2][3] However, current OPC simulators * do not consider the loss of spatial frequency content due to pupil apodization or pellicle film effects. Both of these effects cause a loss of critical high-spatial-frequency information in the imaging process.…”

Section: Introductionmentioning

confidence: 99%

Novel apodization and pellicle optical models for accurate optical proximity correction modeling at 45 and <inline-formula><math altimg="none" display="inline" overflow="scroll"><mrow><mn>32</mn><mspace width="0.3em" /><mi>nm</mi></mrow></math></inline-formula>

Zhang

Lucas

Adrichem³

et al. 2007

J. Micro/Nanolith. MEMS MOEMS

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An accurate optical model is the foundation of an accurate optical proximity correction ͑OPC͒ model, which has always been the key for successful implementation of model-based OPC. As critical dimension ͑CD͒ control requirements become severe at the 45-and 32-nm device generations, OPC model accuracy and hence optical model accuracy requirements become more stringent. In previous generations, certain optical effects could be safely ignored. For example, the transmission attenuation particularly at high spatial frequencies caused by lens apodization effects and organic pellicle films was ignored or not accurately modeled in conventional OPC simulators. These effects are now playing a more important role in OPC modeling as technology scales down. Our simulations indicate these effects can cause CD modeling errors of 5 nm or larger, at the 45-nm technology node and beyond. Therefore, they must be accurately modeled in OPC modeling. In our OPC modeling methodology, we propose two novel low-pass-filter models to capture the frequency-dependent transmission attenuation due to lens apodization and to pellicle films. These parameterized novel lowpass-filter models ensure that lens apodization and pellicle-film-induced transmission attenuation can be appropriately account for through regression during the experimental OPC model calibration stage in the case where no measured transmission data are available, thus enabling physics-centric OPC model building with considerably higher accuracy. We can then avoid overfitting the OPC model, which could cause instability in the OPC correction stage. The validity and efficiency of the proposed novel models are also verified using an industry-standard lithography simulator as well as an experimental OPC model calibration at the 45-nm technology node.

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“…Основными особенностями расчета фотолитографических систем являются неприменимость стан-дартных скалярных методов из-за высоких числовых апертур [7], необходимость учета частичной коге-рентности источников [8], поляризационные свойства материалов [9][10][11], а также нелинейности в фоторе-зистах. Все это вынуждает разрабатывать новые алгоритмы расчета формирования изображения, осно-ванные на более точном применении дифракционной теории.…”

Section: Introductionunclassified

Study of birefringence influence on image quality of photolithography systems in view of partially-coherent light source

Nikulina¹,

Зверев²

2015

Naučno-teh. vestn. inf. tehnol. meh. opt.

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Polarization aberration analysis in optical lithography systems

Cited by 26 publications

References 0 publications

Front Matter: Volume 7488

Front Matter: Volume 7488

Novel apodization and pellicle optical models for accurate optical proximity correction modeling at 45 and <inline-formula><math altimg="none" display="inline" overflow="scroll"><mrow><mn>32</mn><mspace width="0.3em" /><mi>nm</mi></mrow></math></inline-formula>

Study of birefringence influence on image quality of photolithography systems in view of partially-coherent light source

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