Polarizability of shallow donors in silicon - A reply

Castner, T. G.; Lee, N.K.

doi:10.1016/0038-1098(76)91342-9

Cited by 6 publications

(1 citation statement)

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“…The electronic properties were calculated for a Mott insulator in the zero bandwidth limit of the Hubbard model (25), a doubly degenerate Hubbard Model (26), and doped semiconductors on the insulating side of the metal-insulator transition (27) where a strong enhancement of the dielectric constant, previously observed, was accounted for. Caution is evidently required in interpreting relevant experimental data (28). There also appeared a summary of findings on a series of compounds related to sodium cholate (29).…”

Section: Introductionmentioning

confidence: 99%

Cryogenics

Gilchrist¹,

Isnard²

1976

Digest of Literature on Dielectrics Volume 40 1976

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Section: Introductionmentioning

confidence: 99%

Cryogenics

Gilchrist¹,

Isnard²

1976

Digest of Literature on Dielectrics Volume 40 1976

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Polarizability of Donors in Polar Semiconductors. Effect of a Weak Magnetic Field

Cahay

Kartheuser

1984

Physica Status Solidi (b)

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The electrical pohrizability t.cnsor of shallow donors in polar semiconductors is calculated in the presence of a wcak rnagnctic field. A variational t.rcatment of the donor is developed in the framework of the effective-mass theory, including the effects of interaction between the charge carriers and the longitudinal-optical (LO) phonons within the static approximation. The effective-mass Hamiltoriian of the donor a.llows for central-cell corrections by means of a phenomenological impurity potent.ia.1. The results are compmcd with previous theoretical work and experiment. in the cam of donor impurities in Si. I t is shown t.hat the donor polarizability depends strongly on the form chosen for the model impurity potential and undergoes a 30 to 50% dccrcase due to the electron-(LO)phonon i n k a c t i o n in the CBSC of impurities in 111-V and 11-VI compounds, respectively.Der elekt.rische Polarisa,tionstcnsor fhchcr Ilonatorcn in polaren Hableitern wird fur den Pall schwacher Msgnetfelder bercchnet. Ein Variationsverfahrcn fiir dcn Donator wird unter Benutznng der Effcktivmassentheoric cntwickelt, wobei die Wechselwirkung zwischen dcn geladcncn 'l'eilchen nnd den longitudinalen-optisehcn (LO)-Phononen einbegriffcn ist und die statischo Niiherung bcnutzt wird. Der Effektivmassen-Hamiltonoperator ent.halt ein phanomenologisches Potential, welchcs den ,,central cell"-Effekt bcrucksichtigt. Die Ergebiiisse werden mit vorhcrgehcnden theorctischen Hcrcchnungcn und Expcrimenten im Fallc von Donatoren in Si verglichen. Hs mird bewiescn, daS die Polarisierbarlrcit wesent.lich von der Form des Storstellenpotentials abhangt und cine Verminderung yon 30 bis 50% durch die Elektron-(L0)I'hononen-Wcchselwirkung im Falle der 111-V-bcziehungsweise 11-Vl-Halbleitcrn erfahrt.

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Central cell effects on the polarizabilities of shallow donors in silicon

Manimahalai

Palaniyandi

1985

Journal of Physics and Chemistry of Solids

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Polarizability of shallow donors in silicon - A reply

Cited by 6 publications

References 6 publications

Cryogenics

Cryogenics

Polarizability of Donors in Polar Semiconductors. Effect of a Weak Magnetic Field

Central cell effects on the polarizabilities of shallow donors in silicon

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