Polarity Inversions of the Photo‐Hall E.M.F.

Possible reasons of the photorcurrent decrease under illumination are discussed by comparison of all experimental data obtained in the previous studies of the photosensitivity degradation in CdS:Cu single crystals. By further studies a photosensitivity decrease is found t o be due to vanishing of the shallow donors which coxupensate the r-centres. A degradation mechanism conaisting in transformation of the shallow donors iiito rapid recombination s-centres, due to their association, is suggested. On heating in darkness these s-centres dissociate to recover both, the initial density of the shallow donors and the high photosensitivity.Mogliche Griinde fur die Verringerung des Photostroxnes mit Belichtung werden durch den Vergleich aller experimentellen Daten friiherer Untersuchungen der Degradation der Photoempfindlichkeit in CdS : Cu-Einkrihdlen diskntiert. Bei weitereu Untersuctungen wird ein Abfall der Photoempfindlichkeit gefunden, der au.f das Verschwinden der flachen Donatoren, die die r-Zentren kompensieren, zuruckzufuhren ist. Ein Degradationsniechauisinus, der in der Umwandlung der flachen Donatoren in schnelle Rekombinations-s-Zentren infolge ihrer Assoziatiori beateht, wird vorgeschlagen. Beim Tempern im Dunklen dissoziieren diese s-Zentren wid stellen sowohl die ursprungliche Dichte der flachen Donatoren als auch die hohe Photoempfindlichkeit wieder her.

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Photosensitivity degradation mechanism in CdS:Cu single crystals

Korsunska

Маркевич

Torchinskaya

et al. 1980

Phys. Stat. Sol. (a)

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Physical nature of degradation of light-emitting diodes and semiconductor lasers

Torchinskaya¹,

Шейнкман²

1983

J Appl Spectrosc

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Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Musiienko,

Yang,

Gries

et al. 2024

Nat Commun

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The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material’s effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10–3 to 103 cm2V–1s–1 and lifetimes varying between 10–9 and 10–3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.

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Polarity Inversions of the Photo‐Hall E.M.F.

Abstract: The inversion of the sign of the photo-Hall voltage is investigated in almost intrinsic semiconductors being illuminated with light in the region of the fundamental absorption.

Cited by 3 publications

References 4 publications

Photosensitivity degradation mechanism in CdS:Cu single crystals

Photosensitivity degradation mechanism in CdS:Cu single crystals

Physical nature of degradation of light-emitting diodes and semiconductor lasers

Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

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