Polarity inversion of GaN(0001) by a high Mg doping

Pezzagna, Sébastien; Vennéguès, P.; Grandjean, N.; Massies, J.

doi:10.1016/j.jcrysgro.2004.05.067

Cited by 71 publications

(50 citation statements)

References 27 publications

(23 reference statements)

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“…This accumulation may favour the formation of the stacking fault defects until a critical concentration is reached on the (0001) plane whereby the zinc blende phase may form. A similar accumulation process is attributed to the delayed formation of inversion domains and related defects in Ga-polar GaN: Mg [4,6]. Our observations are similar to those of Pezzagna et al whereby N-polar GaN heavily doped with Mg exhibited a change to the zinc blende phase [4].…”

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confidence: 89%

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Stacking faults and phase changes in Mg‐doped InGaN grown on Si

Hawkridge¹,

Liliental‐Weber

et al. 2009

Phys. Status Solidi (c)

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We report evidence for the role of Mg in the formation of basal stacking faults and a phase transition in InxGa1‐xN layers doped with Mg grown by molecular beam epitaxy on Si (111) substrates with AlN buffer layers. Several samples with varying In content between x ∼ 0.1 and x ∼ 0.3 are examined by transmission electron microscopy and other techniques. High densities of basal stacking faults are observed in the central region of the InGaN layer away from the substrate or layer surface, but at varying depths within this region. Selected area diffraction patterns show that while the InGaN layer is initially in the wurtzite phase (and of good quality) AlN buffer layer, there is a change to the zinc blende phase in the upper part of the InGaN layer. SIMS measurements show that the Mg concentration drops from a maximum to a steady concentration coinciding with the presence of the basal stacking faults. There is little change in In or Ga concentrations in the same area. High‐resolution electron microscopy from the area of the stacking faults confirms that the change to the cubic phase is abrupt across one such fault. These results indicate that Mg plays a role in the formation of stacking faults and the phase change observed in InxGa1‐xN alloys. We also consider the role of In in the formation of these defects. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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supporting

confidence: 89%

“…19 cm -3 , defects such as pyramidal and extended inversion domains can occur [3,4]. Polarity inversion has also been observed in InN: Mg [5].…”

mentioning

confidence: 99%

Stacking faults and phase changes in Mg‐doped InGaN grown on Si

Hawkridge¹,

Liliental‐Weber

et al. 2009

Phys. Status Solidi (c)

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“…This "turnover" occurs at lower applied bias shown to produce donors and reduce the free hole concentration; this result has been attributed to the formation of compensating defect complexes (such as Mg-V N ) [32,33] and pyramidal inversion domains [34,35]. TEM studies of Mg-doped InN, InGaN, and GaN have shown that high levels of Mg result in large densities of planar extended defects, which could also be contributing to the n-type conductivity of overdoped films [36][37][38][39].…”

Section: Electrical and Thermoelectric Measurements A Resultsmentioning

confidence: 99%

Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a "window" from ca. 3 × 10 17 to 1 × 10 19 cm −3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coefficient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ∼70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge. * Corresponding author: JWAger@lbl.gov

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“…Similar images have been observed in GaN by HRTEM. 20 The regions with dark contrast have been identified as N-polar and the bright regions as Ga-polar by the multiple darkfield method. 21 According to the references, we can conclude that the images show the inversion domain boundaries between the Al-polar and N-polar materials.…”

Section: Resultsmentioning

confidence: 99%

Polarity Analysis of Self-Seeded Aluminum Nitride Crystals Grown by Sublimation

Han

Duan

et al. 2008

Journal of Elec Materi

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Self-seeded aluminum nitride (AlN) crystals were successfully grown in a tungsten crucible by the sublimation method. The polarities along the growth direction of these AlN samples were characterized by chemical etching, combined with high-resolution transmission electronic microscopy (HRTEM) and Raman spectroscopy. It has been proven by our experimental results that etching in KOH solution and in molten KOH-NaOH can be a reliable method to determine the surfaces with different polarities. Chemically active N-polar (0001) AlN surfaces were removed appreciably, while only etch pits related to threading dislocations were observed on Al-polar surfaces after chemical etching. HRTEM images revealed that there are noticeable inversion domain boundaries in the samples. Raman spectrum measurements showed the vibration mode change before and after etching in the same geometrical arrangement.

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Polarity inversion of GaN(0001) by a high Mg doping

Cited by 71 publications

References 27 publications

Stacking faults and phase changes in Mg‐doped InGaN grown on Si

Stacking faults and phase changes in Mg‐doped InGaN grown on Si

Hole transport and photoluminescence in Mg-doped InN

Polarity Analysis of Self-Seeded Aluminum Nitride Crystals Grown by Sublimation

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