Polarity Independent Resistive Switching in MoS2 Nanosheets and PEO based Nanocomposite Films

Abstract

Here, we report the exfoliation of bulk MoS 2 (molybdenum disulfide) into few layer nanosheets and then prepared nano-composite films with poly (ethylene oxide) (MoS 2 -PEO). We observed non-polar or polarity independent bistable resistive switching memory in two-terminal devices with Indium tin oxide (ITO) and aluminum (Al) as bottom and top electrode. In both bipolar and unipolar operations, it is observed that the biasing direction controls the current conduction mechanism. When positive bias is applied at the top Al electrode, the low resistance state (LRS) conduction is Ohmic type. But in opposite biasing condition, LRS conduction is space charge controlled. The current-voltage characteristics of the bipolar and unipolar switching are distinctly different in terms of their RESET process. In bipolar, the RESET process is very sharp whereas in unipolar operation it is staggered and step-wise.