2008
DOI: 10.1103/physrevlett.100.047401
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Polariton Laser Using Single MicropillarGaAsGaAlAsSemiconductor Cavities

Abstract: Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as 10 4 . Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the halflight half-matter polariton … Show more

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Cited by 456 publications
(411 citation statements)
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“…Tsintzos and colleagues' advance 2 builds on that, and fits in with a body of work [7][8][9] published in recent months. Two of these papers describe the construction of VCSEL-like cavities whose mirrors are of good enough quality to induce either electroluminescence 7 or the emission of laser light 8 in the polariton-coupling regime. Both these experiments were performed at temperatures of around 10 kelvin.…”
Section: Polaritronics In Viewsupporting
confidence: 53%
“…Tsintzos and colleagues' advance 2 builds on that, and fits in with a body of work [7][8][9] published in recent months. Two of these papers describe the construction of VCSEL-like cavities whose mirrors are of good enough quality to induce either electroluminescence 7 or the emission of laser light 8 in the polariton-coupling regime. Both these experiments were performed at temperatures of around 10 kelvin.…”
Section: Polaritronics In Viewsupporting
confidence: 53%
“…Its spectral width is 0.4 meV, which is larger than the bonding-antibonding splitting, thus allowing the preparation of a linear combination of both states 26 . Simultaneously, it is smaller than the energy separation between the ground state and the first excited state in a single micropillar 22 , and also smaller than the energy distance to the polariton reservoir (located 7.5 meV above). In our analysis we can thus ignore the excited states and only consider the ground state coupled modes.…”
Section: Methodsmentioning
confidence: 99%
“…1a) are obtained by dry etching of a planar semiconductor microcavity with a Rabi splitting of 15 meV at 10 K, the temperature of our experiments (see Methods). Each individual pillar has a diameter of 4 µm and presents a series of confined polaritonic states [21][22][23] with a lifetime τ ∼ 33 ps. The centre-to-centre separation of 3.7 µm results in a tunnel coupling of the lowest energy confined polaritonic states (ground state) of J = 0.1 meV.…”
mentioning
confidence: 99%
“…As compared with previously reported techniques to spatially confine polariton condensates 5,7,28,29 , the size and height of the trap can be continuously controlled by changing both the excitation power and the position of the spot. Controlling both the propagation and the wavefunction of a polariton condensate opens the way to the realization of polariton circuits, a first step towards high-speed all-optical information processing 22 .…”
mentioning
confidence: 97%