Abstract:Anisotropic strain induces a partial linear polarization of the photo-luminescence (PL) emitted by cubic semiconductor crystals such as GaAs or InP. We present here a polarimetric PL microscope dedicated to the characterization of semiconductor devices. The anisotropic strain is quantified through the determination of the degree of linear polarization (DOLP) of the PL and of the angle of this partial linear polarization. We illustrate the possibilities of this tool by mapping the anisotropic strain generated i… Show more
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