“…The lattice strain will occur when the impurity ions are incorporated into the ZnO lattice. Impurity ions will be separated to form planar defects, reducing strain energy at high concentrations [26,27] (Figure 2). Figure 2 SEM of 3% Al-doped ZnO thin films at 40°С pure (a), 1% Al-doped (b), 3% Al-doped (c), at 60°С pure (d), 3% Al-doped (e) and at 90°С 3% Al-doped (f) bath growth temperature, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The lattice strain will occur when the impurity ions are incorporated into the ZnO lattice. Impurity ions will be separated to form planar defects, reducing strain energy at high concentrations [26,27] (Figure 2).…”
Section: Structure and Morphology Of Zno:almentioning
ZnO:Al thin films were deposited on a glass substrate by a sol-gel method with a combined two-step, spin coating and growth treatment in a water bath. The effect of Al incorporation and the bath growth temperature on the crystal structure, morphology and optical properties of the samples are investigated. The results showed that the morphology of 3% Al-doped film was rod-like nanostructure at 40°С and granular at 60 and 90°С. The lattice strain increases after the Al-doping at 40 and 60°C. And the strain of 3% Al-doped film decreased with increasing the bath growth temperature. The optical band gap of pure and 3% Al-doped film at different bath growth temperature is calculated. Relatively better visible light transmittance and photoluminescence (PL) characteristics were obtained at 40°С. Blue emission associated with surface defects was observed.
“…The lattice strain will occur when the impurity ions are incorporated into the ZnO lattice. Impurity ions will be separated to form planar defects, reducing strain energy at high concentrations [26,27] (Figure 2). Figure 2 SEM of 3% Al-doped ZnO thin films at 40°С pure (a), 1% Al-doped (b), 3% Al-doped (c), at 60°С pure (d), 3% Al-doped (e) and at 90°С 3% Al-doped (f) bath growth temperature, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The lattice strain will occur when the impurity ions are incorporated into the ZnO lattice. Impurity ions will be separated to form planar defects, reducing strain energy at high concentrations [26,27] (Figure 2).…”
Section: Structure and Morphology Of Zno:almentioning
ZnO:Al thin films were deposited on a glass substrate by a sol-gel method with a combined two-step, spin coating and growth treatment in a water bath. The effect of Al incorporation and the bath growth temperature on the crystal structure, morphology and optical properties of the samples are investigated. The results showed that the morphology of 3% Al-doped film was rod-like nanostructure at 40°С and granular at 60 and 90°С. The lattice strain increases after the Al-doping at 40 and 60°C. And the strain of 3% Al-doped film decreased with increasing the bath growth temperature. The optical band gap of pure and 3% Al-doped film at different bath growth temperature is calculated. Relatively better visible light transmittance and photoluminescence (PL) characteristics were obtained at 40°С. Blue emission associated with surface defects was observed.
“…The dopant powders added to the Zn powders before thermal annealing are made of high purity Sn and Mg. Using conventional CVD, molecular beam epitaxy (MBE), and wet-chemistry growth techniques, these dopant elements have been found to influence many physical properties of the ZnO nanostructures, such as the electrical, magnetic, optical, and catalytic properties [ 25 , 26 , 27 ], as well as their morphology. S. K. Shina, in his work [ 23 ], observed that ZnO Sn-doped hierarchical nanorods had better responsiveness to ethanol and acetone vapors than the corresponding non-doped nanorods, due to the monocrystalline structure, increase in O-vacancy, and density of defect that accelerated and improved the effectiveness of the vapor diffusion process.…”
In this work, we propose the synthesis of ZnO nanostructures through the thermal oxidation of ball-milled powders with the introduction of Mg and Sn doping species at the preliminary step of milling. We investigate the advantages and challenges of this two steps process for the production and fabrication of highly crystalline ZnO nanowires. This simple method allows us to fabricate ZnO nanowires with a higher quality core crystal at a much lower temperature and for a shorter processing time than the state-of-the-art, and decorated with by ZnO2 nanoparticles as determined via TEM analysis. The main findings will show that the crystalline core of the nanowires is of hexagonal ZnO while the nanoparticles on the surface are ZnO2 cubic type. Generally, the method proves to be suitable for applications that require a high surface-to-volume ratio, for example, catalysis phenomena, in which the presence of zinc oxides species can play an important role.
Aqueous zinc‐ion battery (AZIB) has become a promising candidate in grid energy storage due to its low cost, environmental friendliness, and high safety. However, AZIB usually suffers from uncontrollable zinc deposition and dendrite growth as well as hydrogen evolution and passivation on the surface of zinc anode. To address the above issues, a unique 3D Zn alloy foam anode built from Zn–Sn–Pb alloy in 3D Cu foam is constructed by a facile hot dipping method. The proposed 3D Zn alloy anode, through introducing elements Sn and Pb, enhances the hydrogen evolution overpotential, reduces the corrosion current, greatly mitigates the self‐corrosion in the electrolyte, and efficiently inhibits the growth of Zn dendrite during cycling. Importantly, such Zn alloy engineering together with a 3D Cu foam current collector enables highly stable Zn storage properties. The full cell assembled using the proposed 3D Zn alloy anode and MnO2 nanosheet cathode exhibits superior reversible capacity (103.4 mAh g−1) and excellent cycling stability (capacity retention of 87% over 4000 cycles) at 1.8 A g−1.
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