Polar Oxide Thin Films for MEMS Applications

Muralt, Paul

doi:10.1007/978-3-211-99311-8_24

Cited by 6 publications

(7 citation statements)

References 102 publications

(91 reference statements)

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“…The crystalline structure of the film depends on the rates of heterogeneous nucleation at the metal–ferroelectric interface and homogeneous nucleation in the film bulk 67,68 . In PZT films on Pt or similar surfaces, heterogeneous nucleation dominates homogeneous nucleation, resulting in the formation of a columnar‐grain Pe structure 34,69,70 . By contrast, in barium strontium titanate (BST) films, fast nucleation in the bulk results in a small‐grain polycrystalline structure 69,71 .…”

Section: Discussionmentioning

confidence: 99%

“…Thus, the presence of voids and carbon residuals at the Pt surface hinders nucleation and leads to the formation of large crystals. After nucleation, atoms migrate toward the upward‐moving crystallization front 70 …”

Section: Discussionmentioning

confidence: 99%

“…67,68 In PZT films on Pt or similar surfaces, heterogeneous nucleation dominates homogeneous nucleation, resulting in the formation of a columnar-grain Pe structure. 34,69,70 By contrast, in barium strontium titanate (BST) films, fast nucleation in the bulk results in a small-grain polycrystalline structure. 69,71 The heterogeneous nucleation of Pe grains occurs directly on the Pt surface 72,73 ; this assertion is supported by other authors' observation that transient intermetallic phases such as Pt x Pb and Pt 3 Ti 52,74-76 are not responsible for the Pe nucleation in PZT.…”

Section: F I G U R E 9 Permittivity As a Function Of Applied Electric...mentioning

confidence: 99%

“…73 Normally, dense PZT films on Pt exhibit a columnar-grain Pe structure with 80-250 nm crystallites. 40,43,52,70 The crystalline boundaries are usually perpendicular to the film interface and do not contain an intermediate layer. 40,43 Py phases are not discernible in dense PZT films by XRD if a sufficient excess of PbO is used in the precursor solution 43 ; however, Py nanocrystals (10-15 nm) are often observed in the Pe grains of PZT films prepared under other conditions.…”

Section: F I G U R E 9 Permittivity As a Function Of Applied Electric...mentioning

confidence: 99%

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Microstructure analysis of porous lead zirconate–titanate films

et al. 2021

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Porous ferroelectric lead zirconate–titanate (PZT) films with different internal structures are synthesized using a sol–gel technique and spin‐on deposition on platinized silicon substrates. The films’ porosity is engineered using various structure‐directing agents: polyvinylpyrrolidone with a molecular weight of 360 000 (1–6.6 wt.%) and block copolymer surfactants Brij 30 and Brij 76 (30–60 wt.%). The films’ structures are characterized by transmission electron microscopy. The PVP‐based films contain large, elongated pores with diameters as large as 100 nm. By contrast, the films prepared from solutions with block copolymers exhibit a small pore size depending on the surfactant molecular weight (10–19 nm for Brij 30 and 20–27 nm for Brij 76), with a mostly uniform distribution of channel‐like pores within the film volume. Despite their highly porous structures, all of the films show a columnar‐grain perovskite structure with grains as large as several micrometers and curved grain boundaries. The films demonstrate ferroelectric behavior with dielectric hysteresis, and their permittivity decreases with increasing porosity. Thus, the Brij 30 and Brij 76 copolymer surfactants can be used to engineer fine porous structures in PZT films for various applications in electronics.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: F I G U R E 9 Permittivity As a Function Of Applied Electric...mentioning

confidence: 99%

Section: F I G U R E 9 Permittivity As a Function Of Applied Electric...mentioning

confidence: 99%

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Microstructure analysis of porous lead zirconate–titanate films

et al. 2021

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“…Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film–substrate interface [ 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 ]. For this reason, the main strategy of columnar grain growth in CSD films is a choice of the substrate with a close lattice constant or introducing an intermediate seeding layer whose structure decreases the Gibbs free energy Δ Gv at the interface [ 32 , 46 , 47 ].…”

Section: Introductionmentioning

confidence: 99%

Control of Columnar Grain Microstructure in CSD LaNiO3 Films

et al. 2023

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Conductive LaNiO3 (LNO) films with an ABO3 perovskite structure deposited on silicon wafers are a promising material for various electronics applications. The creation of a well-defined columnar grain structure in CSD (Chemical Solution Deposition) LNO films is challenging to achieve on an amorphous substrate. Here, we report the formation of columnar grain structure in LNO films deposited on the Si-SiO2 substrate via layer-by-layer deposition with the control of soft-baking temperature and high temperature annealing time of each deposited layer. The columnar structure is controlled not by typical heterogeneous nucleation on the film/substrate interface, but by the crystallites’ coalescence during the successive layers’ deposition and annealing. The columnar structure of LNO film provides the low resistivity value ρ~700 µOhm·cm and is well suited to lead zirconate-titanate (PZT) film growth with perfect crystalline structure and ferroelectric performance. These results extend the understanding of columnar grain growth via CSD techniques and may enable the development of new materials and devices for distinct applications.

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Lead-Free Ferroelectric Thin Films

Malič¹,

Kupec²,

Vojisavljević³

et al. 2016

Handbook of Sol-Gel Science and Technology

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Sol-gel-derived ferroelectric thin films, with lead zirconate titanate (Pb(Zr,Ti)O 3 , PZT) as one of the most widely studied materials, have been investigated for a wide range of applications, including microelectromechanical systems. The research of environment-friendly alternatives to lead-based materials, to a large extent driven by legislation, has been mainly conducted in the domain of bulk ceramics; however, environment-friendly alternatives to lead-based ferroelectric

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Polar Oxide Thin Films for MEMS Applications

Cited by 6 publications

References 102 publications

Microstructure analysis of porous lead zirconate–titanate films

Microstructure analysis of porous lead zirconate–titanate films

Control of Columnar Grain Microstructure in CSD LaNiO3 Films

Lead-Free Ferroelectric Thin Films

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