Point Defects in Sb2Te3−xSexCrystals

Horák, J.; Karamazov, S.; Nesládek, Pavel; Lošťák, P.

doi:10.1006/jssc.1996.7235

Cited by 12 publications

(15 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our results suggest the existence of additional type of point defects in doped bismuth telluride materials, contrary to the assumption that antisite defects are the only defects in these materials [13][14][15].…”

Section: Electron Diffractioncontrasting

confidence: 53%

“…EPMA results (Table 4) showed that the stoichiometry variations (1-1.5 at%, i.e. (3-4.5) Â 10 20 cm --3 ) due to cross substitutions of Sb and Bi, and of Se and Te are larger than the antisite defect concentrations ((10 19 -1.1) Â 10 20 cm --3 ) reported in the literature [14,15]. Antisite defects were assumed in the literature to explain results of Hall and reflectivity measurements.…”

Section: Electron Diffractionmentioning

confidence: 91%

“…We assume a statistical distribution of the blocks. The size of these blocks needs to be determined and depends on the experimentally obtained variations, [14], Sb Te antisite defect concentration of (8-10) Â 10 19 cm --3 in Sb 2 Te 3 [15]. 4 ) Bi Te antisite defect concentration of 10 19 cm --3 in Bi 2 Te 3 [15].…”

Section: Electron Diffractionmentioning

confidence: 99%

See 2 more Smart Citations

Chemical Composition and Crystal Lattice Defects of Bi2Te3 Peltier Device Structures

Eyidi

Maier

Eibl

et al. 2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

The microstructure of p-type (Bi,Sb) 2 Te 3 and n-type Bi 2 (Te,Se) 3 Peltier devices was investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, electron probe microanalysis and transmission electron microscopy, in the bulk and close to the metal-semiconductor interface. The substitution of Sb for Bi in the p-type material varies about 1 at% or 3 Â 10 20 atoms cm --3 on the micrometer scale. The same behaviour was found for Se and Te in the n-type material. From these results it can be ruled out that Bi and Sb and Se and Te are statistically distributed in the crystal structure. Models for the Bi/Sb and Se/Te disorder are discussed. No evidence for the presence of antisite defects was found by electron probe microanalysis. The investigated materials were highly textured and contained large dislocation densities of 10 9 cm --2 . In the bulk, straight dislocations, loops and half-loops were observed that are 10 nm in size. Under the electron beam elongated mobile dislocations move in the basal plane by successive hopping from pinning sites. The role of the observed extended lattice defects for accommodating local non-stoichiometry is discussed. The lattice defects might primarily affect the low-temperature electronic transport properties and the lattice heat conductivity. At the metal-Bi 2 Te 3 interface, characteristic defect structures were identified, that extend up to between 2 and 20 mm into the Bi 2 Te 3 .

show abstract

Section: Electron Diffractioncontrasting

confidence: 53%

Section: Electron Diffractionmentioning

confidence: 91%

See 1 more Smart Citation

Chemical Composition and Crystal Lattice Defects of Bi2Te3 Peltier Device Structures

Eyidi

Maier

Eibl

et al. 2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

show abstract

“…It is because of the fact that, the atomic radius of sulfur (r s ¼0.103 nm) is smaller than that of tellurium (r Te ¼0.142 nm). Such contractions have been observed in selenium doped bismuth telluride [7]. The (015) plane has the strongest value in the X-ray intensity of all samples.…”

Section: Structural and Composition Analysismentioning

confidence: 84%

“…However, such high level of impurity decreases the energy gap and reduces the use of this material above 400 K [5]. The incorporation of chromium atoms into the Sb 2 Te 3 lattice makes the hole concentration unaltered and the value of σ increases, whereas selenium content decreases the holes [6,7]. Subatomic-percent sulfur doping of nanostructured Sb 2 Te 3 resulted in $ 25% greater S, leading to a figure of merit of 0.95 [8].…”

Section: Introductionmentioning

confidence: 99%

Studies on sulfur doping and figure of merit in vapor grown Sb2Te3 platelet crystals

Thankamma

Kunjomana

2015

Journal of Crystal Growth

View full text Add to dashboard Cite

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

et al. 2016

View full text Add to dashboard Cite

Defects and defect engineering are at the core of many regimes of material research, including the field of thermoelectric study. The 60‐year history of V2VI3 thermoelectric materials is a prime example of how a class of semiconductor material, considered mature several times, can be rejuvenated by better understanding and manipulation of defects. This review aims to provide a systematic account of the underexplored intrinsic point defects in V2VI3 compounds, with regard to (i) their formation and control, and (ii) their interplay with other types of defects towards higher thermoelectric performance. We herein present a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis. An up‐to‐date understanding of intrinsic point defects in V2VI3 compounds is summarized in a (χ, r)‐model and applied to elucidating the donor‐like effect. These new insights not only enable more innovative defect engineering in other thermoelectric materials but also, in a broad context, contribute to rational defect design in advanced functional materials at large.

show abstract

Point Defects in Sb2Te3−xSexCrystals

Cited by 12 publications

References 12 publications

Chemical Composition and Crystal Lattice Defects of Bi2Te3 Peltier Device Structures

Chemical Composition and Crystal Lattice Defects of Bi2Te3 Peltier Device Structures

Studies on sulfur doping and figure of merit in vapor grown Sb2Te3 platelet crystals

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

Contact Info

Product

Resources

About

Point Defects in Sb2Te3−xSexCrystals

Cited by 12 publications

References 12 publications

Chemical Composition and Crystal Lattice Defects of Bi2Te3 Peltier Device Structures

Chemical Composition and Crystal Lattice Defects of Bi2Te3 Peltier Device Structures

Studies on sulfur doping and figure of merit in vapor grown Sb2Te3 platelet crystals

New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials

Contact Info

Product

Resources

About

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials