Point defects in gamma-irradiated n-GaN

Емцев, В. В.; Davydov, V. Yu.; Kozlovskii, V. V.; Lundin, V. V.; Полоскин, Д.С.; Смирнов, А. Н.; Shmidt, N. M.; Usikov, A. S.; Aderhold, J.; Klausing, H.; Mistele, D.; Rotter, Thomas; Stemmer, J.; Semchinova, O.; Graul, J.

doi:10.1088/0268-1242/15/1/313

Cited by 43 publications

(21 citation statements)

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“…Most of the radiation studies involving GaN-based HEMTs have involved proton or electron damage. [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] In terms of heterostructures, preliminary data from proton damage studies suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. 13 The effects of gamma-ray irradiation are also of fundamental interest for space applications and electronics in nuclear plants.…”

Section: Introductionmentioning

confidence: 70%

“…High-energy photons can produce Compton electrons through interactions with the materials, which causes the generation of Frenkel pairs and defect clusters. [20][21][22] Most of these defects can migrate and recombine or create complexes, which are stable even at room temperature. 22,23 The saturation currents were significantly degraded after 500 Mrad irradiation, as shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

“…Gamma rays can cause reactions at the interface between the metal and semiconductor, resulting in high ideality factors and increased on-state resistance, 21 as well as reordering of native defects and impurities. 16,22 Devices with small gate lengths and widths are vulnerable to radiation because of the larger relative decrease in effective carrier density. 21 In this study, we report the changes in DC characteristics of In 0.17 Al 0.83 N/GaN HEMTs after cumulative 60 Co gammaray irradiation from 30 to 500 Mrad.…”

Section: Introductionmentioning

confidence: 99%

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Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Kim

Liu

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Introductionmentioning

confidence: 70%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Kim

Liu

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The primary defects, created in GaN by 60 Co γ -rays irradiation, are Frenkel pairs, produced by the Compton electrons having the mean energy of about 600 keV. In this respect, γ -irradiation, in terms of its impact, is analogous to internal electron irradiation (16). Irradiation of GaN by 60 Co γ -rays shows the presence of electron traps having activation energy of around 80 meV, which is assumed to be related to nitrogen vacancies, V N (6).…”

Section: Resultsmentioning

confidence: 99%

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Yadav

Flitsiyan

Chernyak

et al. 2015

Radiation Effects and Defects in Solids

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2015): Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors, Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology,To understand the effects of 60 Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ∼ 300 Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400 Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25 min resulted in partial recovery of transport properties and device performance.

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“…Donor states at E C -70 meV may be attributed to the nitrogen vacancies. Further progress in radiation experiments on doped n-GaN can shed new light on the properties and behavior of native defects in this semiconductor, see also [8].…”

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confidence: 99%

Shallow donor centers in gallium nitrides

Emtsev

Davydov

Emtsev

et al. 2003

phys. stat. sol. (c)

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Production processes of electrically active defects in nominally undoped n-GaN irradiated with fast electrons are investigated. It has been demonstrated that the silicon impurity atoms with shallow donor states at E C -20 meV interact with native defects neither during irradiation nor annealing at elevated temperatures. Two major kinds of defects produced by irradiation in n-GaN are revealed: donor centers at E C -70 meV and deep acceptors centers. These defects were found to be unstable at T > 200 °C. They can be attributed to the vacancies on the nitrogen and gallium sublattices, respectively.Irradiation of semiconductors provides a powerful tool for a controllable production of native point defects. This is of practical importance for binary compounds because of the variety of native defects on both sublattices. Theoretical calculations of the energy spectra of native defects [1-4] point out that the nitrogen vacancy and interstitial gallium atom are shallow and deep donors, respectively, whereas the gallium vacancy is a triple acceptor. The interstitial nitrogen atom is expected to be amphoteric. In the present paper we report new information on radiation-produced defects in nominally undoped n-GaN subjected to electron irradiation.Undoped n-GaN layers of wurtzite structure were grown on sapphire substrates by the MOCVD technique. The initial concentration and mobility of charge carriers were in the low 10 16 cm -3 and (700 -800) cm 2 /Vs, respectively. Samples were irradiated with fast electrons at 0.9 MeV at room temperature. Some samples were then isochronically annealed in steps of ∆T = 100 °C and ∆t = 20 min in a nitrogen ambient. Electrical measurements with the aid of the Van der Pauw technique were taken over a temperature range of 50 to 300 K.In Fig. 1 some curves of the electron concentration versus reciprocal temperature for one of the n-GaN layers before and after electron irradiation are displayed. Analysis of the initial n(T) curves on the basis of the relevant equations of charge balance showed the presence of two kinds of shallow donors at E C -20 meV and E C -40 meV in nearly equal concentrations of 3.3 and 3.2 × 10 16 cm -3, respectively. The former ones are usually attributed to silicon impurity atoms on the gallium sites and the latter ones belong to unidentified growth defects; see also [5]. The shallow donors at E C -20 meV are moderately compensated, so the concentration of deep acceptors in the initial materials is about 1 × 10 16 cm -3 .

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Point defects in gamma-irradiated n-GaN

Cited by 43 publications

References 13 publications

Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Shallow donor centers in gallium nitrides

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