Point defects and diffusion in cadmium telluride

Grill, R.; Zappettini, A.

doi:10.1016/j.pcrysgrow.2005.06.001

Cited by 32 publications

(25 citation statements)

References 78 publications

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“…This can also be done automatically by moving the sample on the horizontal plane. Another important parameter that can be obtained is the total volume occupied by the inclusions: this is directly related to off-stoichiometry, which can be obtained by other techniques [5][6][7]. It should be pointed out that histograms like the one shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…One of them consists of the determination of equilibrium vapor pressure of samples at high temperature: if the tellurium phase is present, the total pressure is dominated by tellurium partial vapor pressure and the overall stoichiometry deviation can be determined [5,6]. However, all information on dimensions and distributions of the inclusions is lost.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Three-dimensional mapping of tellurium inclusions in CdZnTe crystals by means of improved optical microscopy

Zambelli

Marchini

Zha

et al. 2011

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Three-dimensional mapping of tellurium inclusions in CdZnTe crystals by means of improved optical microscopy

Zambelli

Marchini

Zha

et al. 2011

Journal of Crystal Growth

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“…That 1D solver in turn represented an extension to simulation work that looked at the problem of defect migration almost exclusively in terms of diffusion, omitting self-consistent field effects and reaction terms. [51][52][53] Simulation studies of defect diffusion along grain boundaries in 2D CdTe have previously been performed for the defect cases of Cu, 40 Cl, 54 and P, 55 using Fisher style models that were described in Section II B. These papers again omit the effects of reactions as well as self-consistent field effects.…”

Section: Discussionmentioning

confidence: 99%

Self-consistent simulation of CdTe solar cells with active defects

Brinkman

Guo

Akis

et al. 2015

Journal of Applied Physics

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We demonstrate a self-consistent numerical scheme for simulating an electronic device which contains active defects. As a specific case, we consider copper defects in cadmium telluride solar cells. The presence of copper has been shown experimentally to play a crucial role in predicting device performance. The primary source of this copper is migration away from the back contact during annealing, which likely occurs predominantly along grain boundaries. We introduce a mathematical scheme for simulating this effect in 2D and explain the numerical implementation of the system. Finally, we will give numerical results comparing our results to known 1D simulations to demonstrate the accuracy of the solver and then show results unique to the 2D case.

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“…This method concerns all defects, electrons and holes as components of thermodynamic equilibrium in the bulk crystal (complete equilibrium of the point defects). Then the modeling procedure reduces to solving set of equations which describe penetration of point defects into solid from the gas state along with the equation of electroneutrality and intrinsic conductivity equation [109][110]. The most complete spectrum of the native defects was taken into account under modeling the point defects ensemble.…”

Section: Zns Filmsmentioning

confidence: 99%