Point defect diffusion in α-Zr

Hood, G.M.

doi:10.1016/0022-3115(88)90091-8

Cited by 159 publications

(60 citation statements)

References 74 publications

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“…Moreover, the preexponential factor D 0 % 1:7 Â 10 À8 m 2 s À1 is low according to semi-empirical rules. 38) Recently the self-diffusion measurement was performed in high purity (hp) -Ti material 39) which is presented in Fig. 11 together with the previous data in the less pure (lp) -Ti.…”

Section: Self-diffusionmentioning

confidence: 86%

Diffusion in α-Ti and Zr

Pérez¹,

Nakajima

Dyment³

2003

Mater. Trans.

139

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Impurity diffusion in -Ti and -Zr is characterized by fast interstitial diffusion of small atoms and slow substitutional diffusion of large atoms. The mechanism of the fast diffusion is discussed on the basis of the several features: the effect of -phase transformation, the diffusion anisotropy, the atomic size effect and the correlation between solubility and diffusivity. The temperature dependence of the diffusion coefficients of all the solutes and solvent Ti studied in -Ti follows the Arrhenius law, whereas in -Zr, all the elements studied with exception of Ti show downward curvatures that follow the self-diffusion behaviour in -Zr. The influence of ultra-fast diffusion impurities on the diffusion process in these matrices, as well as the possibility that different mechanism acts in each matrix is analyzed.

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Section: Self-diffusionmentioning

confidence: 86%

Diffusion in α-Ti and Zr

Pérez¹,

Nakajima

Dyment³

2003

Mater. Trans.

139

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“…More relevant to the present study, loop growth rate is decreased significantly due to the presence of Sn, attributed to the change of the point defect mobility and to enhanced vacancy-interstitial recombination by Hinks [22]. Indeed, it has been reported that Sn is a very important element in zirconium, affecting radiation damage significantly: Hood suggests that Sn at low concentrations (0.l-0.2%) has little influence, whereas the high-Sn (1.5%) alloys show the strong effects of Sn on radiation damage by increasing vacancy trapping and recombination possibilities [37]. Looking at the chemistry of Zircaloy-2, the only major alloying elements present in the alpha solid solution are Sn and O, whereas other elements are present in the intermetallic precipitates.…”

Section: Influence Of Alloy Elementsmentioning

confidence: 99%

Irradiation Induced Defect Clustering in Zircaloy-2

Yao

Daymond

et al. 2017

Applied Sciences

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Featured Application: The data and results will be helpful to evaluate the radiation damages in fuel cladding or calandria tube of nuclear power plants.Abstract: The effect of irradiation temperature and alloying elements on defect clustering behaviour directly from the cascade collapse in Zircaloy-2 is examined. The in-situ ioWn irradiation technique was employed to study the formation of -type dislocation loops by Kr ion irradiation at 573 K and 773 K, while the dependence of dislocation loop formationon the presence of alloying elements was investigated by comparing with the defect microstructures of pure Zr irradiated under similar conditions. The experimentally observed temperature dependence of defect clustering was further investigated using molecular dynamics (MD) simulations near the experimental irradiation temperatures. We particularly concentrate on yield and morphology of small defect clusters formed directly from cascade collapse at very low ion doses. Smaller loop size and higher defect yield (DY) in Zircaloy-2 as compared to pure Zr suggests that the presence of the major alloying element Sn increases the number of nucleation sites for the defect clusters but suppresses the point defect recombination. MD simulations at 600 and 800 K revealed that the production of both vacancy and interstitial clusters drops significantly with an increase of irradiation temperature, which is reflected in experimentally collected DY data.

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“…Self-diffusion in a-Zr has been studied by many authors, for a review see [3] and [4]. Aftc controversial discussions in the literature about the normal or anomalous character of t k self-diffusion, Horvath et al [3] seem to have conclusively demonstrated that a large an negative curvature in the Arrhenius plot exists in the a-phase.…”

Section: Introductionmentioning

confidence: 97%

Diffusion Constants for the Vacancy Mechanism in Mg and α‐Zr Calculation

Monti

1991

Physica Status Solidi (b)

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Calculation BY A. M. MONTISelf-diffusion coeficients for the monovacancy mechanism described in terms of the Arrhenius law a: calculated in Mg and a-Zr from computer simulation results. Different short-range pair interatom potentials which reproduce some material properties are used. Special interest is devoted to the resul obtained for the a-Zr lattice; by assuming a vacancy-formation energy value E' = 1.8 eV, a self-diffusic energy value Q = 3.3 eV and a pre-exponential factor Do = 5 x lo-' m2 s -l are obtained. The: numbers indirectly support some ideas proposed in the literature to understand the self-diffusic behaviour shown by experimental results, as well as some predictions made by other authors. Aus Computersimulationsergebnissen werden Selbstdiffusionskoeffizienten fur den

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Point defect diffusion in α-Zr

Cited by 159 publications

References 74 publications

Diffusion in α-Ti and Zr

Diffusion in α-Ti and Zr

Irradiation Induced Defect Clustering in Zircaloy-2

Diffusion Constants for the Vacancy Mechanism in Mg and α‐Zr Calculation

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Point defect diffusion in α-Zr

Cited by 159 publications

References 74 publications

Diffusion in &alpha;-Ti and Zr

Diffusion in &alpha;-Ti and Zr

Irradiation Induced Defect Clustering in Zircaloy-2

Diffusion Constants for the Vacancy Mechanism in Mg and α‐Zr Calculation

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Diffusion in α-Ti and Zr

Diffusion in α-Ti and Zr