Point defect diagrams for pure and doped nickel oxide $$ {\hbox{N}}{{\hbox{i}}_{{1} - \delta }}{\hbox{O}} $$ in the temperature range of 1,173–1,673 K (II)

Abstract

The point defect diagrams in nickel oxide Ni 1Àd O, pure and doped with M 3+ and M + metal ions, taking into consideration all of the types of defects in the cation sublattice, are presented in this work. A new method was used for the calculations of the diagrams. This method is based on the derived relations between the standard Gibbs energies of the formation of nickel vacancies and the intrinsic ionic and electronic defects. It also uses the experimental values of the deviation from the stoichiometry. The calculations were performed using the results of studies obtained by many authors in the temperature range of 1,173-1,673 K.

Defect Complexes and Defect Clusters in Mn1-deltaO, Co1-deltaO and Ni1-deltaO Oxides Diagrams of the Concentrations of Point Defects

“…The points ((□) vac) denote the values obtained for the model of the structure of simple defects (Stokłosa, 2011b). As shown in Figure 2, the introduction of defect clusters into the model of the structure of defects does not change the adjusted value of o V " Ni ΔG .…”

“…In the previous work (Stokłosa, 2011b), the calculations of the diagrams of concentrations of point defects in Ni 1-δ O were presented, assuming in the first approximation the presence of nickel vacancies and interstitial ions with the highest ionization degree and lower ionization degrees. As a result of these calculations, it has been found that in the temperature range of 1273-1673 K, taking into account only " Ni V and…”

“…obtained in the works (Stokłosa, 2011a(Stokłosa, , 2011b(Stokłosa, , 2012, for the simple model of defects, without complexes. The diagrams of the point defects concentrations for the Mn 1-δ O, taking into account manganese vacancies and interstitial manganese ions as well as complexes: C 2 , C 4 and C 6 , obtained using the results of the studies of the deviation from the stoichiometry by: , a) for 1173 K, b) 1373 K, c) ) for 1773 K. The (--) line: the values of the sum of the concentrations of electronic defects, ([h  ]+b[e']) (b=μ e /μ h -the ratio of the mobility of electrons to the mobility of electron holes).…”

“…The diagrams of the point defects concentrations for the Ni 1-δ O, taking into account simple defects as well as complexes: C 2 , C 4 and C 6 , obtained using the results of the studies of the deviation from the stoichiometry by: ) a) for 1273 K, b) 1673 K, and by (Sockel & Schmalzried, 1968) (c) for 1473 K. The points mark the results of the deviation from the stoichiometry studies obtained by: (Sockel & Schmalzried, 1968) -(♦) points, ) -(■) points, -(○) points, (Hangsrud & Norby, 1998) -(Δ) points. ) (solid points), ) (empty points) and by (Sockel & Schmalzried, 1968) ΔG , obtained in the work (Stokłosa, 2011b) for the model of simple defects without defect clusters.…”

“…In the previous works (Stokłosa, 2011a(Stokłosa, , 2011b(Stokłosa, , 2012, the calculations of the diagrams of the concentrations of point defects were performed, for Co 1-δ O, Ni 1-δ O and Mn 1-δ O, using the results of the studies of the deviation from the stoichiometry by different authors, assuming as a first approximation that there are cation vacancies and interstitial metal ions with different ionization degrees. A new method was used there for the calculations of the diagrams.…”